Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are compris...

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Bibliographic Details
Published in:APL materials 2014-03, Vol.2 (3), p.032107-032107-8
Main Authors: Lastras-Martínez, A., Ortega-Gallegos, J., Guevara-Macías, L. E., Nuñez-Olvera, O., Balderas-Navarro, R. E., Lastras-Martínez, L. F., Lastras-Montaño, L. A., Lastras-Montaño, M. A.
Format: Article
Language:English
Subjects:
GALLIUM ARSENIDES
INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NANOSCIENCE AND NANOTECHNOLOGY
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
STRAINS
TIME RESOLUTION
ZINC SULFIDES
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Summary:We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.
ISSN:2166-532X
2166-532X
DOI:10.1063/1.4868519