Structural transformations in reactively sputtered alumina films

Thin films of amorphous alumina of thickness ∼350 nm were prepared on silicon wafer by DC cathode reactive sputtering. The effects of thermal annealing on the structural properties were investigated at annealing temperatures of 600°C, 800°C, 1100°C and 1220°C. X-ray diffraction showed that crystalli...

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Bibliographic Details
Main Authors: Nayar, P, Khanna, A
Format: Conference Proceeding
Language:English
Subjects:
ALUMINIUM OXIDES
Aluminum oxide
ANNEALING
ATOMIC FORCE MICROSCOPY
Cathode sputtering
CATHODES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALLIZATION
Heat treatment
SILICON
Silicon wafers
SPUTTERING
SURFACES
TEMPERATURE DEPENDENCE
THICKNESS
THIN FILMS
X-RAY DIFFRACTION
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Summary:Thin films of amorphous alumina of thickness ∼350 nm were prepared on silicon wafer by DC cathode reactive sputtering. The effects of thermal annealing on the structural properties were investigated at annealing temperatures of 600°C, 800°C, 1100°C and 1220°C. X-ray diffraction showed that crystallization starts at 800°C and produces δ and θ alumina phases, the latter phase grows with heat treatment and the film was predominantly δ-phase with small amount of a-phase after annealing at 1220°C. AFM studies found that the surface of thin films smoothened upon crystallization.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4872813