Study of difference in interfacial reaction at Fe{sub 3}O{sub 4}/ZnO and ZnO/Fe{sub 3}O{sub 4} heterostructure using synchrotron radiation

We have prepared Fe{sub 3}O{sub 4}/ZnO and ZnO/Fe{sub 3}O{sub 4} bilayer structure on p-Si substrate using pulsed laser deposition technique (PLD). X-ray diffraction study revealed (0001) oriented growth of ZnO and (111) oriented growth of Fe{sub 3}O{sub 4} in both the bilayer structure. We observed...

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Bibliographic Details
Published in:AIP conference proceedings 2014-04, Vol.1591 (1)
Main Authors: Wadikar, A. D., Master, Ridhi, Choudhary, R. J., Phase, D. M.
Format: Article
Language:English
Subjects:
COMPARATIVE EVALUATIONS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION
FERMI LEVEL
HETEROJUNCTIONS
IRON OXIDES
LASER RADIATION
LAYERS
PULSED IRRADIATION
SUBSTRATES
SYNCHROTRON RADIATION
VALENCE
X-RAY DIFFRACTION
ZINC OXIDES
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Summary:We have prepared Fe{sub 3}O{sub 4}/ZnO and ZnO/Fe{sub 3}O{sub 4} bilayer structure on p-Si substrate using pulsed laser deposition technique (PLD). X-ray diffraction study revealed (0001) oriented growth of ZnO and (111) oriented growth of Fe{sub 3}O{sub 4} in both the bilayer structure. We observed a change in the density of states near the Fermi level in valence band spectra in case of Fe{sub 3}O{sub 4}/ZnO bilayer when compared to that of ZnO/Fe{sub 3}O{sub 4}. Nonlinear current–voltage (I-V) characteristics were observed in both the samples confirmed that these bilayer structures can be used for spintronic application.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4872817