Neutron irradiation effects on metal-gallium nitride contacts

We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemica...

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Bibliographic Details
Published in:Journal of applied physics 2014-03, Vol.115 (12)
Main Authors: Katz, Evan J., Lin, Chung-Han, Qiu, Jie, Zhang, Zhichun, Mishra, Umesh K., Cao, Lei, Brillson, Leonard J.
Format: Article
Language:English
Subjects:
Applied physics
Atomic force microscopy
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Contact resistance
ELECTRIC CONDUCTIVITY
Electric contacts
EMISSION SPECTROSCOPY
FAST NEUTRONS
GALLIUM
GALLIUM NITRIDES
IRRADIATION
NEUTRON FLUENCE
Neutron irradiation
Neutrons
Organic chemistry
Phase transitions
Photoelectric emission
PHOTOEMISSION
PHYSICAL RADIATION EFFECTS
SCANNING ELECTRON MICROSCOPY
THERMAL NEUTRONS
Transmission lines
X ray spectra
X-RAY SPECTROSCOPY
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Summary:We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 1015 n/cm2 neutron threshold for Schottky barrier ideality factor increases, a 1015 n/cm2 fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 1016 n/cm2 neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4869552