Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

Ge layer grown on Si(100) at the low temperature of ∼100 °C by molecular beam epitaxy is studied using scanning tunneling microscopy and Raman spectroscopy. It is found that crystalline and pseudomorphic to the Si substrate Ge islands are formed at the initial growth stage. The islands acquire the b...

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Bibliographic Details
Published in:Journal of applied physics 2014-04, Vol.115 (14)
Main Authors: Talochkin, A. B., Shklyaev, A. A., Mashanov, V. I.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
DENSITY
GERMANIUM
HOLES
MOLECULAR BEAM EPITAXY
NANOSCIENCE AND NANOTECHNOLOGY
POTENTIALS
QUANTUM DOTS
RAMAN SPECTROSCOPY
SCANNING TUNNELING MICROSCOPY
SILICON
SUBSTRATES
TEMPERATURE DEPENDENCE
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Summary:Ge layer grown on Si(100) at the low temperature of ∼100 °C by molecular beam epitaxy is studied using scanning tunneling microscopy and Raman spectroscopy. It is found that crystalline and pseudomorphic to the Si substrate Ge islands are formed at the initial growth stage. The islands acquire the base size of 1.2–2.6 nm and they form arrays with the super-high density of (5–8) × 1012 cm−2 at 1–2 nm Ge coverages. Such a density is at least 10 times higher than that of Ge “hut” clusters grown via the Stranski-Krastanov growth mode. It is shown that areas between the crystalline Ge islands are filled with amorphous Ge, which is suggested to create potential barrier for holes localized within the islands. As a result, crystalline Ge quantum dots appear being isolated from each other.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4871283