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Spintronic switches for ultra low energy global interconnects
We present ultra-low energy interconnect design using nano-scale spin-torque (ST) switches for global data-links. Emerging spin-torque phenomena can lead to ultra-low-voltage, high-speed current-mode magnetic-switches. ST-switches can simultaneously provide large trans-impedance gain by employing ma...
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Published in: | Journal of applied physics 2014-05, Vol.115 (17) |
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container_issue | 17 |
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container_title | Journal of applied physics |
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creator | Sharad, Mrigank Roy, Kaushik |
description | We present ultra-low energy interconnect design using nano-scale spin-torque (ST) switches for global data-links. Emerging spin-torque phenomena can lead to ultra-low-voltage, high-speed current-mode magnetic-switches. ST-switches can simultaneously provide large trans-impedance gain by employing magnetic tunnel junctions, to convert current-mode signals into large-swing voltage levels. Such device-characteristics can be used in the design of energy-efficient current-mode global interconnects. |
doi_str_mv | 10.1063/1.4868699 |
format | article |
fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22273733</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2127689593</sourcerecordid><originalsourceid>FETCH-LOGICAL-c285t-2a7c7ee9b60c6d6f3fc51747975fdd0ab7286436af058cb33aa396434355263d3</originalsourceid><addsrcrecordid>eNpFkEtLAzEYRYMoWKsL_0HAlYupSb7Ja-FCii8ouFDXIZNJ2injpCYppf_elg64unA5XA4XoVtKZpQIeKCzWgkltD5DE0qUriTn5BxNCGG0UlrqS3SV85oQShXoCXr83HRDSXHoHM67rriVzzjEhLd9SRb3cYf94NNyj5d9bGyPD7RPLg6DdyVfo4tg--xvxpyi75fnr_lbtfh4fZ8_LSrHFC8Vs9JJ73UjiBOtCBAcp7KWWvLQtsQ2kilRg7CBcOUaAGtBH4oaOGcCWpiiu9NuzKUz2XXFu9UoYRhjEiTAP7VJ8XfrczHruE3DQcwwyqRQmusjdX-iXIo5Jx_MJnU_Nu0NJeb4oaFm_BD-AG4mYgo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2127689593</pqid></control><display><type>article</type><title>Spintronic switches for ultra low energy global interconnects</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Sharad, Mrigank ; Roy, Kaushik</creator><creatorcontrib>Sharad, Mrigank ; Roy, Kaushik</creatorcontrib><description>We present ultra-low energy interconnect design using nano-scale spin-torque (ST) switches for global data-links. Emerging spin-torque phenomena can lead to ultra-low-voltage, high-speed current-mode magnetic-switches. ST-switches can simultaneously provide large trans-impedance gain by employing magnetic tunnel junctions, to convert current-mode signals into large-swing voltage levels. Such device-characteristics can be used in the design of energy-efficient current-mode global interconnects.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4868699</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DESIGN ; ELECTRIC CURRENTS ; ELECTRIC POTENTIAL ; GAIN ; HETEROJUNCTIONS ; IMPEDANCE ; Interconnections ; INTERFACES ; MAGNETISM ; SPIN ; SWITCHES ; TORQUE ; TUNNEL EFFECT ; Tunnel junctions</subject><ispartof>Journal of applied physics, 2014-05, Vol.115 (17)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-2a7c7ee9b60c6d6f3fc51747975fdd0ab7286436af058cb33aa396434355263d3</citedby><cites>FETCH-LOGICAL-c285t-2a7c7ee9b60c6d6f3fc51747975fdd0ab7286436af058cb33aa396434355263d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22273733$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sharad, Mrigank</creatorcontrib><creatorcontrib>Roy, Kaushik</creatorcontrib><title>Spintronic switches for ultra low energy global interconnects</title><title>Journal of applied physics</title><description>We present ultra-low energy interconnect design using nano-scale spin-torque (ST) switches for global data-links. Emerging spin-torque phenomena can lead to ultra-low-voltage, high-speed current-mode magnetic-switches. ST-switches can simultaneously provide large trans-impedance gain by employing magnetic tunnel junctions, to convert current-mode signals into large-swing voltage levels. Such device-characteristics can be used in the design of energy-efficient current-mode global interconnects.</description><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DESIGN</subject><subject>ELECTRIC CURRENTS</subject><subject>ELECTRIC POTENTIAL</subject><subject>GAIN</subject><subject>HETEROJUNCTIONS</subject><subject>IMPEDANCE</subject><subject>Interconnections</subject><subject>INTERFACES</subject><subject>MAGNETISM</subject><subject>SPIN</subject><subject>SWITCHES</subject><subject>TORQUE</subject><subject>TUNNEL EFFECT</subject><subject>Tunnel junctions</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkEtLAzEYRYMoWKsL_0HAlYupSb7Ja-FCii8ouFDXIZNJ2injpCYppf_elg64unA5XA4XoVtKZpQIeKCzWgkltD5DE0qUriTn5BxNCGG0UlrqS3SV85oQShXoCXr83HRDSXHoHM67rriVzzjEhLd9SRb3cYf94NNyj5d9bGyPD7RPLg6DdyVfo4tg--xvxpyi75fnr_lbtfh4fZ8_LSrHFC8Vs9JJ73UjiBOtCBAcp7KWWvLQtsQ2kilRg7CBcOUaAGtBH4oaOGcCWpiiu9NuzKUz2XXFu9UoYRhjEiTAP7VJ8XfrczHruE3DQcwwyqRQmusjdX-iXIo5Jx_MJnU_Nu0NJeb4oaFm_BD-AG4mYgo</recordid><startdate>20140507</startdate><enddate>20140507</enddate><creator>Sharad, Mrigank</creator><creator>Roy, Kaushik</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140507</creationdate><title>Spintronic switches for ultra low energy global interconnects</title><author>Sharad, Mrigank ; Roy, Kaushik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-2a7c7ee9b60c6d6f3fc51747975fdd0ab7286436af058cb33aa396434355263d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DESIGN</topic><topic>ELECTRIC CURRENTS</topic><topic>ELECTRIC POTENTIAL</topic><topic>GAIN</topic><topic>HETEROJUNCTIONS</topic><topic>IMPEDANCE</topic><topic>Interconnections</topic><topic>INTERFACES</topic><topic>MAGNETISM</topic><topic>SPIN</topic><topic>SWITCHES</topic><topic>TORQUE</topic><topic>TUNNEL EFFECT</topic><topic>Tunnel junctions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sharad, Mrigank</creatorcontrib><creatorcontrib>Roy, Kaushik</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sharad, Mrigank</au><au>Roy, Kaushik</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spintronic switches for ultra low energy global interconnects</atitle><jtitle>Journal of applied physics</jtitle><date>2014-05-07</date><risdate>2014</risdate><volume>115</volume><issue>17</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>We present ultra-low energy interconnect design using nano-scale spin-torque (ST) switches for global data-links. Emerging spin-torque phenomena can lead to ultra-low-voltage, high-speed current-mode magnetic-switches. ST-switches can simultaneously provide large trans-impedance gain by employing magnetic tunnel junctions, to convert current-mode signals into large-swing voltage levels. Such device-characteristics can be used in the design of energy-efficient current-mode global interconnects.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4868699</doi></addata></record> |
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ispartof | Journal of applied physics, 2014-05, Vol.115 (17) |
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source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
subjects | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DESIGN ELECTRIC CURRENTS ELECTRIC POTENTIAL GAIN HETEROJUNCTIONS IMPEDANCE Interconnections INTERFACES MAGNETISM SPIN SWITCHES TORQUE TUNNEL EFFECT Tunnel junctions |
title | Spintronic switches for ultra low energy global interconnects |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T11%3A15%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Spintronic%20switches%20for%20ultra%20low%20energy%20global%20interconnects&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Sharad,%20Mrigank&rft.date=2014-05-07&rft.volume=115&rft.issue=17&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4868699&rft_dat=%3Cproquest_osti_%3E2127689593%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c285t-2a7c7ee9b60c6d6f3fc51747975fdd0ab7286436af058cb33aa396434355263d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2127689593&rft_id=info:pmid/&rfr_iscdi=true |