Perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite (001) thin films

We investigated the dependencies of both the magnetization characteristics and the perpendicular magnetic anisotropy of CoxFe3–xO4(001) epitaxial films (x = 0.5 and 0.75) on the growth conditions of the reactive magnetron sputtering process. Both saturation magnetization and the magnetic uniaxial an...

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Bibliographic Details
Published in:Journal of applied physics 2014-05, Vol.115 (17)
Main Authors: Yanagihara, H., Utsumi, Y., Niizeki, T., Inoue, J., Kita, Eiji
Format: Article
Language:English
Subjects:
ANISOTROPY
COBALT COMPOUNDS
Cobalt ferrites
CONCENTRATION RATIO
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
Epitaxial growth
EPITAXY
FERRITES
Film growth
Flow velocity
INTERFACES
LAYERS
Magnetic anisotropy
MAGNETIC PROPERTIES
Magnetic saturation
Magnetism
MAGNETIZATION
Magnetron sputtering
Oxidation
REFLECTION
SPUTTERING
STRAINS
SURFACES
THIN FILMS
VALENCE
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Summary:We investigated the dependencies of both the magnetization characteristics and the perpendicular magnetic anisotropy of CoxFe3–xO4(001) epitaxial films (x = 0.5 and 0.75) on the growth conditions of the reactive magnetron sputtering process. Both saturation magnetization and the magnetic uniaxial anisotropy constant Ku are strongly dependent on the reactive gas (O2) flow rate, although there is little difference in the surface structures for all samples observed by reflection high-energy electron diffraction. In addition, certain dead-layer-like regions were observed in the initial stage of the film growth for all films. Our results suggest that the magnetic properties of CoxFe3–xO4 epitaxial films are governed by the oxidation state and the film structure at the vicinity of the interface.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4864048