Cyan laser diode grown by plasma-assisted molecular beam epitaxy

We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2014-01, Vol.104 (2), p.23503
Main Authors: Turski, H., Muziol, G., Wolny, P., Grzanka, S., Cywiński, G., Sawicka, M., Perlin, P., Skierbiszewski, C.
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Applied physics
Continuous radiation
Diodes
Epitaxial growth
GALLIUM NITRIDES
Indium gallium nitrides
Laser beam cladding
LASERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NITROGEN
PHOTODIODES
QUANTUM WELLS
Semiconductor lasers
Substrates
THRESHOLD CURRENT
Threshold currents
VAPOR PHASE EPITAXY
Vapor phases
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (ΦN) during quantum wells (QWs) growth. We found that high ΦN improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold current density are discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4861655