Low-density InP-based quantum dots emitting around the 1.5  μ m telecom wavelength range

The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5 × 108 cm−2 are obtained by using a special capping technique a...

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Bibliographic Details
Published in:Applied physics letters 2014-01, Vol.104 (2)
Main Authors: Yacob, M., Reithmaier, J. P., Benyoucef, M.
Format: Article
Language:English
Subjects:
Applied physics
DENSITY
Epitaxial growth
INDIUM ARSENIDES
INDIUM PHOSPHIDES
Lattice matching
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHOTONS
QUANTUM DOTS
Quantum theory
Surface matching
Telecommunications
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Summary:The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5 × 108 cm−2 are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5 μm with narrow excitonic linewidth below 50 μeV, which can be used as single photon source in the telecom wavelength range.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4861940