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Influence of substituting Sn for Sb on the thermoelectric transport properties of CoSb{sub 3}-based skutterudites

Band structure calculations that incorporate impurity effects suggest that a band resonant state may be formed in p-type CoSb{sub 3}-based skutterudites by replacing Sb atoms with Sn dopant atoms. Such resonant states have the potential to greatly improve thermoelectric energy conversion efficiency...

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Bibliographic Details
Published in:Journal of applied physics 2014-03, Vol.115 (10)
Main Authors: Hui, Si, Nielsen, Michele D., Homer, Mark R., Medlin, Douglas L., Tobola, Janusz, Salvador, James R., Heremans, Joseph P., Department of Physics, Ohio State University, Columbus, Ohio 43210, Pipe, Kevin P., Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, Uher, Ctirad
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Language:English
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Summary:Band structure calculations that incorporate impurity effects suggest that a band resonant state may be formed in p-type CoSb{sub 3}-based skutterudites by replacing Sb atoms with Sn dopant atoms. Such resonant states have the potential to greatly improve thermoelectric energy conversion efficiency by increasing the density of states variation near the Fermi level, thereby increasing the Seebeck coefficient at a given carrier concentration. Through transport measurements of the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient, we show that a practical band resonant state is not achieved by Sn doping. Compared to undoped CoSb{sub 3}, the dimensionless figure of merit (ZT) in Sn-doped CoSb{sub 3} is enhanced slightly at high temperatures to a value of 0.2, mostly due to a reduction in thermal conductivity. The Fermi level is calculated not to reach the band resonant state induced by Sn impurity atoms within the range of Sn concentrations examined here.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4867609