III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics

The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We ha...

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Bibliographic Details
Published in:Journal of applied physics 2014-02, Vol.115 (7)
Main Authors: Prucnal, Slawomir, Zhou, Shengqiang, Ou, Xin, Facsko, Stefan, Oskar Liedke, Maciej, Bregolin, Felipe, Liedke, Bartosz, Grebing, Jochen, Fritzsche, Monika, Hübner, Rene, Mücklich, Arndt, Rebohle, Lars, Helm, Manfred, Turek, Marcin, Drozdziel, Andrzej, Skorupa, Wolfgang
Format: Article
Language:English
Subjects:
ANNEALING
Applied physics
Chemical synthesis
CMOS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Epitaxial growth
EPITAXY
Group III-V semiconductors
HETEROJUNCTIONS
INDIUM ARSENIDES
ION BEAMS
ION IMPLANTATION
LAYERS
Liquid phases
LIQUIDS
MICROSTRUCTURE
Nanoelectronics
Nanostructure
NANOSTRUCTURES
Optoelectronics
Photonics
SEMICONDUCTOR MATERIALS
Semiconductors
SILICON
Silicon compounds
Wafers
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Summary:The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We have developed a CMOS compatible and fully integrated solution for the integration of III-V compound semiconductors with silicon technology for optoelectronic applications. InAs compound semiconductor nanostructures are synthesized in SOI wafers using the combined ion beam implantation and millisecond liquid-phase epitaxial growth. Optoelectronic and microstructural investigations carried out on implanted, annealed, and selectively etched samples confirm the formation of high-quality III-V compound semiconductor nanostructures.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4865875