Enhancement of electron mobility in asymmetric coupled quantum well structures

We study the low temperature multisubband electron mobility in a structurally asymmetric GaAs/AlxGa1-xAs delta doped double quantum well. We calculate the subband energy levels and wave functions through selfconsistent solution of the coupled Schrodinger equation and Poisson's equation. We cons...

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Bibliographic Details
Published in:Journal of applied physics 2014-02, Vol.115 (7)
Main Authors: Das, S., Nayak, R. K., Sahu, T., Panda, A. K.
Format: Article
Language:English
Subjects:
ALUMINIUM ARSENIDES
Applied physics
Asymmetric structures
ASYMMETRY
CONCENTRATION RATIO
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIELECTRIC MATERIALS
DOPED MATERIALS
ELECTRON MOBILITY
Electrons
ENERGY LEVELS
GALLIUM ARSENIDES
Interface roughness
INTERFACES
Mathematical analysis
NANOSCIENCE AND NANOTECHNOLOGY
POISSON EQUATION
POTENTIALS
QUANTUM WELLS
RANDOM PHASE APPROXIMATION
RESPONSE FUNCTIONS
ROUGHNESS
SCATTERING
Schrodinger equation
SCHROEDINGER EQUATION
Wave functions
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Summary:We study the low temperature multisubband electron mobility in a structurally asymmetric GaAs/AlxGa1-xAs delta doped double quantum well. We calculate the subband energy levels and wave functions through selfconsistent solution of the coupled Schrodinger equation and Poisson's equation. We consider ionized impurity scattering, interface roughness scattering, and alloy disorder scattering to calculate the electron mobility. The screening of the scattering potentials is obtained by using static dielectric response function formalism within the random phase approximation. We analyze, for the first time, the effect of asymmetric structure parameters on the enhancement of multisubband electron mobility through intersubband interactions. We show that the asymmetric variation of well width, doping concentration, and spacer width considerably influences the interplay of scattering mechanisms on mobility. Our results of asymmetry induced enhancement of electron mobility can be utilized for low temperature device applications.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4865877