Properties of zirconia thin films deposited by laser ablation

Zirconia thin films have been deposited by laser ablation of a ceramic ZrO2 target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (λ=193 nm, ν=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has...

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Bibliographic Details
Main Authors: Cancea, V N, Filipescu, M, Colceag, D, Mustaciosu, C, Dinescu, M
Format: Conference Proceeding
Language:English
Subjects:
ABLATION
ARGON FLUORIDES
ATOMIC FORCE MICROSCOPY
Atomic properties
Biocompatibility
CERAMICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
FIBROBLASTS
Laser ablation
Laser beams
Lasers
MASS SPECTROSCOPY
MORPHOLOGY
Secondary ion mass spectrometry
SILICON
Silicon substrates
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
Zirconium dioxide
ZIRCONIUM OXIDES
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Summary:Zirconia thin films have been deposited by laser ablation of a ceramic ZrO2 target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (λ=193 nm, ν=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has been established to a value from 2.0 to 3.4 Jcm−2. A silicon (100) substrate has been placed parallel to the target, at a distance of 4 cm, and subsequently has been heated to temperatures ranging between 300 °C and 600 °C. Thin films morphology has been characterized by atomic force microscopy and secondary ion mass spectrometry. Biocompatibility of these thin films has been assessed by studying the cell attachment of L929 mouse fibroblasts.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4832808