Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature

Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the non-local magnetoresistance is estimated to be 0.0057 Ω at room temp...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2014-02, Vol.104 (5)
Main Authors: Sasaki, Tomoyuki, Suzuki, Toshio, Ando, Yuichiro, Koike, Hayato, Oikawa, Tohru, Suzuki, Yoshishige, Shiraishi, Masashi
Format: Article
Language:English
Subjects:
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
EFFICIENCY
ELECTRIC POTENTIAL
HETEROJUNCTIONS
INTERFACES
IRON
Magnesium oxide
MAGNESIUM OXIDES
Magnetism
MAGNETORESISTANCE
Magnetoresistivity
Room temperature
SILICON
SPIN
Spin valves
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the non-local magnetoresistance is estimated to be 0.0057 Ω at room temperature. As a result, a clear rectangle signal is observed in local magnetoresistance measurement even at room temperature. We also investigate the origin of local magnetoresistance by measuring the spin accumulation voltage of each contact separately.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4863818