Reducing disorder in graphene nanoribbons by chemical edge modification

We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrofluoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dippin...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2014-02, Vol.104 (8)
Main Authors: Dauber, J., Terrés, B., Volk, C., Trellenkamp, S., Stampfer, C.
Format: Article
Language:English
Subjects:
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON TRANSFER
Electron transport
ENERGY GAP
GRAPHENE
HYDROFLUORIC ACID
Nanoribbons
NANOSTRUCTURES
Organic chemistry
Silicon dioxide
SILICON OXIDES
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrofluoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4866289