Reducing disorder in graphene nanoribbons by chemical edge modification

We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrofluoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dippin...

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Published in:Applied physics letters 2014-02, Vol.104 (8)
Main Authors: Dauber, J., Terrés, B., Volk, C., Trellenkamp, S., Stampfer, C.
Format: Article
Language:English
Subjects:
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON TRANSFER
Electron transport
ENERGY GAP
GRAPHENE
HYDROFLUORIC ACID
Nanoribbons
NANOSTRUCTURES
Organic chemistry
Silicon dioxide
SILICON OXIDES
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cited_by cdi_FETCH-LOGICAL-c320t-509323964df0e83773005c2fbc1beae07cd660fd6a492b7df4d952ce90479ab63
cites cdi_FETCH-LOGICAL-c320t-509323964df0e83773005c2fbc1beae07cd660fd6a492b7df4d952ce90479ab63
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container_title Applied physics letters
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creator Dauber, J.
Terrés, B.
Volk, C.
Trellenkamp, S.
Stampfer, C.
description We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrofluoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.
doi_str_mv 10.1063/1.4866289
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fullrecord <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22293077</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2127723606</sourcerecordid><originalsourceid>FETCH-LOGICAL-c320t-509323964df0e83773005c2fbc1beae07cd660fd6a492b7df4d952ce90479ab63</originalsourceid><addsrcrecordid>eNpFkE1LAzEYhIMoWKsH_0HAk4fVfOwmm6MUrUJBED2HfLxpU9qkJttD_71bWvA0DAwPM4PQPSVPlAj-TJ_aXgjWqws0oUTKhlPaX6IJIYQ3QnX0Gt3Uuh5txzifoPkX-L2LaYl9rLl4KDgmvCxmt4IEOJmUS7Q2p4rtAbsVbKMzGwx-CXibfQyjHWJOt-gqmE2Fu7NO0c_b6_fsvVl8zj9mL4vGcUaGpiOKM65E6wOBnkvJxyKOBeuoBQNEOi8ECV6YVjErfWi96pgDRVqpjBV8ih5O3FyHqKuLA7iVyymBGzRjTPFx9H9qV_LvHuqg13lf0lhMM8qkZFyQI-vxlHIl11og6F2JW1MOmhJ9fFNTfX6T_wFyi2Vk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2127723606</pqid></control><display><type>article</type><title>Reducing disorder in graphene nanoribbons by chemical edge modification</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP_美国物理联合会现刊（与NSTL共建）</source><creator>Dauber, J. ; Terrés, B. ; Volk, C. ; Trellenkamp, S. ; Stampfer, C.</creator><creatorcontrib>Dauber, J. ; Terrés, B. ; Volk, C. ; Trellenkamp, S. ; Stampfer, C.</creatorcontrib><description>We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrofluoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4866289</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; ELECTRON TRANSFER ; Electron transport ; ENERGY GAP ; GRAPHENE ; HYDROFLUORIC ACID ; Nanoribbons ; NANOSTRUCTURES ; Organic chemistry ; Silicon dioxide ; SILICON OXIDES</subject><ispartof>Applied physics letters, 2014-02, Vol.104 (8)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-509323964df0e83773005c2fbc1beae07cd660fd6a492b7df4d952ce90479ab63</citedby><cites>FETCH-LOGICAL-c320t-509323964df0e83773005c2fbc1beae07cd660fd6a492b7df4d952ce90479ab63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,782,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22293077$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Dauber, J.</creatorcontrib><creatorcontrib>Terrés, B.</creatorcontrib><creatorcontrib>Volk, C.</creatorcontrib><creatorcontrib>Trellenkamp, S.</creatorcontrib><creatorcontrib>Stampfer, C.</creatorcontrib><title>Reducing disorder in graphene nanoribbons by chemical edge modification</title><title>Applied physics letters</title><description>We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrofluoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.</description><subject>Applied physics</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>ELECTRON TRANSFER</subject><subject>Electron transport</subject><subject>ENERGY GAP</subject><subject>GRAPHENE</subject><subject>HYDROFLUORIC ACID</subject><subject>Nanoribbons</subject><subject>NANOSTRUCTURES</subject><subject>Organic chemistry</subject><subject>Silicon dioxide</subject><subject>SILICON OXIDES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkE1LAzEYhIMoWKsH_0HAk4fVfOwmm6MUrUJBED2HfLxpU9qkJttD_71bWvA0DAwPM4PQPSVPlAj-TJ_aXgjWqws0oUTKhlPaX6IJIYQ3QnX0Gt3Uuh5txzifoPkX-L2LaYl9rLl4KDgmvCxmt4IEOJmUS7Q2p4rtAbsVbKMzGwx-CXibfQyjHWJOt-gqmE2Fu7NO0c_b6_fsvVl8zj9mL4vGcUaGpiOKM65E6wOBnkvJxyKOBeuoBQNEOi8ECV6YVjErfWi96pgDRVqpjBV8ih5O3FyHqKuLA7iVyymBGzRjTPFx9H9qV_LvHuqg13lf0lhMM8qkZFyQI-vxlHIl11og6F2JW1MOmhJ9fFNTfX6T_wFyi2Vk</recordid><startdate>20140224</startdate><enddate>20140224</enddate><creator>Dauber, J.</creator><creator>Terrés, B.</creator><creator>Volk, C.</creator><creator>Trellenkamp, S.</creator><creator>Stampfer, C.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140224</creationdate><title>Reducing disorder in graphene nanoribbons by chemical edge modification</title><author>Dauber, J. ; Terrés, B. ; Volk, C. ; Trellenkamp, S. ; Stampfer, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-509323964df0e83773005c2fbc1beae07cd660fd6a492b7df4d952ce90479ab63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>ELECTRON TRANSFER</topic><topic>Electron transport</topic><topic>ENERGY GAP</topic><topic>GRAPHENE</topic><topic>HYDROFLUORIC ACID</topic><topic>Nanoribbons</topic><topic>NANOSTRUCTURES</topic><topic>Organic chemistry</topic><topic>Silicon dioxide</topic><topic>SILICON OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dauber, J.</creatorcontrib><creatorcontrib>Terrés, B.</creatorcontrib><creatorcontrib>Volk, C.</creatorcontrib><creatorcontrib>Trellenkamp, S.</creatorcontrib><creatorcontrib>Stampfer, C.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dauber, J.</au><au>Terrés, B.</au><au>Volk, C.</au><au>Trellenkamp, S.</au><au>Stampfer, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reducing disorder in graphene nanoribbons by chemical edge modification</atitle><jtitle>Applied physics letters</jtitle><date>2014-02-24</date><risdate>2014</risdate><volume>104</volume><issue>8</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrofluoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4866289</doi><oa>free_for_read</oa></addata></record>
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1077-3118
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建）
subjects Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON TRANSFER
Electron transport
ENERGY GAP
GRAPHENE
HYDROFLUORIC ACID
Nanoribbons
NANOSTRUCTURES
Organic chemistry
Silicon dioxide
SILICON OXIDES
title Reducing disorder in graphene nanoribbons by chemical edge modification
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T07%3A21%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Reducing%20disorder%20in%20graphene%20nanoribbons%20by%20chemical%20edge%20modification&rft.jtitle=Applied%20physics%20letters&rft.au=Dauber,%20J.&rft.date=2014-02-24&rft.volume=104&rft.issue=8&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4866289&rft_dat=%3Cproquest_osti_%3E2127723606%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c320t-509323964df0e83773005c2fbc1beae07cd660fd6a492b7df4d952ce90479ab63%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2127723606&rft_id=info:pmid/&rfr_iscdi=true