Micro-contacting of single and periodically arrayed columnar silicon structures by focused ion beam techniques

Micron-sized, periodic crystalline Silicon columns on glass substrate were electrically contacted with a transparent conductive oxide front contact and a focused ion beam processed local back contact. Individual column contacts as well as arrays of >100 contacted columns were processed. Current-v...

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Bibliographic Details
Published in:Applied physics letters 2014-06, Vol.104 (24)
Main Authors: Friedrich, F., Herfurth, N., Teodoreanu, A.-M., Sontheimer, T., Preidel, V., Rech, B., Boit, C.
Format: Article
Language:English
Subjects:
Applied physics
Columns (structural)
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
Current voltage characteristics
CURRENTS
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
GLASS
Glass substrates
ION BEAMS
MICROSTRUCTURE
OPACITY
OXIDES
PERIODICITY
Photovoltaic cells
SEMICONDUCTOR MATERIALS
SILICON
Silicon substrates
SIMULATION
SUBSTRATES
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Description
Summary:Micron-sized, periodic crystalline Silicon columns on glass substrate were electrically contacted with a transparent conductive oxide front contact and a focused ion beam processed local back contact. Individual column contacts as well as arrays of >100 contacted columns were processed. Current-voltage characteristics of the devices were determined. By comparison with characteristics obtained from adapted device simulation, the absorber defect density was reconstructed. The contacting scheme allows the fabrication of testing devices in order to evaluate the electronic potential of promising semiconductor microstructures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4883642