Electronic properties of polycrystalline graphene under large local strain

To explore the transport properties of polycrystalline graphene under large tensile strain, a strain device has been fabricated using piezocrystal to load local strain onto graphene, up to 22.5%. Ionic liquid gate whose capability of tuning carrier density being much higher than that of a solid gate...

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Bibliographic Details
Published in:Applied physics letters 2014-06, Vol.104 (24)
Main Authors: He, Xin, Gao, Li, Tang, Ning, Duan, Junxi, Mei, Fuhong, Meng, Hu, Lu, Fangchao, Xu, Fujun, Wang, Xinqiang, Yang, Xuelin, Ge, Weikun, Shen, Bo
Format: Article
Language:English
Subjects:
Applied physics
CARRIER DENSITY
CARRIER MOBILITY
Crystal defects
Deformation effects
ELECTRONS
GRAIN BOUNDARIES
GRAPHENE
HOLES
Ionic liquids
MOLTEN SALTS
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
POLYCRYSTALS
Resistance
SCATTERING
STRAINS
Tensile strain
Transport properties
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Summary:To explore the transport properties of polycrystalline graphene under large tensile strain, a strain device has been fabricated using piezocrystal to load local strain onto graphene, up to 22.5%. Ionic liquid gate whose capability of tuning carrier density being much higher than that of a solid gate is used to survey the transfer characteristics of the deformed graphene. The conductance of the Dirac point and field effect mobility of electrons and holes is found to decrease with increasing strain, which is attributed to the scattering of the graphene grain boundaries, the strain induced change of band structure, and defects. However, the transport gap is still not opened. Our study is helpful to evaluate the application of graphene in stretchable electronics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4883866