Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer

We report the strong screening of the remote charge scattering sites from the oxide/semiconductor interface of buried enhancement-mode undoped Si two-dimensional electron gases (2DEGs), by introducing a tunable shielding electron layer between the 2DEG and the scattering sites. When a high density o...

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Bibliographic Details
Published in:Applied physics letters 2014-06, Vol.104 (24)
Main Authors: Huang, Chiao-Ti, Li, Jiun-Yun, Chou, Kevin S., Sturm, James C.
Format: Article
Language:English
Subjects:
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON DENSITY
ELECTRONS
INTERFACES
LAYERS
MOBILITY
QUANTUM WELLS
SCATTERING
Screening
SEMICONDUCTOR MATERIALS
SHIELDING
SILICON
SILICON OXIDES
STRAINS
SURFACES
TUNNEL EFFECT
TWO-DIMENSIONAL CALCULATIONS
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Summary:We report the strong screening of the remote charge scattering sites from the oxide/semiconductor interface of buried enhancement-mode undoped Si two-dimensional electron gases (2DEGs), by introducing a tunable shielding electron layer between the 2DEG and the scattering sites. When a high density of electrons in the buried silicon quantum well exists, the tunneling of electrons from the buried layer to the surface quantum well can lead to the formation of a nearly immobile surface electron layer. The screening of the remote charges at the interface by this newly formed surface electron layer results in an increase in the mobility of the buried 2DEG. Furthermore, a significant decrease in the minimum mobile electron density of the 2DEG occurs as well. Together, these effects can reduce the increased detrimental effect of interface charges as the setback distance for the 2DEG to the surface is reduced for improved lateral confinement by top gates.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4884650