Suppression of tin precipitation in SiSn alloy layers by implanted carbon

By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumulati...

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Bibliographic Details
Published in:Applied physics letters 2014-06, Vol.104 (23)
Main Authors: Gaiduk, P. I., Lundsgaard Hansen, J., Nylandsted Larsen, A., Bregolin, F. L., Skorupa, W.
Format: Article
Language:English
Subjects:
Applied physics
Backscattering
Carbon
CARBON ADDITIONS
Chemical precipitation
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
DEFECTS
DISLOCATIONS
Epitaxial growth
Heat treatment
HEAT TREATMENTS
High temperature
Implantation
LAYERS
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
POINT DEFECTS
PRECIPITATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
Scientific imaging
Secondary ion mass spectrometry
SEGREGATION
Silicon
SILICON ALLOYS
Spectroscopy
TIN
TIN ALLOYS
TRANSMISSION ELECTRON MICROSCOPY
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Summary:By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumulation of carbon in the SiSn layers after high temperature carbon implantation and high temperature thermal treatment. Strain-enhanced separation of point defects and formation of dopant-defect complexes are suggested to be responsible for the effects. The possibility for carbon assisted segregation-free high temperature growth of heteroepitaxial SiSn/Si and GeSn/Si structures is argued.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4882175