Field emission characteristics from graphene on hexagonal boron nitride

An attempt has been made to utilize uniquely high electron mobility of graphene on hexagonal boron nitride (h-BN) to electron emitter. The field emission property of graphene/h-BN/Si structure has shown enhanced threshold voltage and emission current, both of which are key to develop novel vacuum na...

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Bibliographic Details
Published in:Applied physics letters 2014-06, Vol.104 (22)
Main Authors: Yamada, Takatoshi, Masuzawa, Tomoaki, Ebisudani, Taishi, Okano, Ken, Taniguchi, Takashi
Format: Article
Language:English
Subjects:
Applied physics
Boron nitride
BORON NITRIDES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENTS
ELECTRIC POTENTIAL
ELECTRON MOBILITY
ELECTRONIC STRUCTURE
ELECTRONS
Emission analysis
Emitters
Emitters (electron)
FIELD EMISSION
FOWLER-NORDHEIM THEORY
GRAPHENE
HEXAGONAL LATTICES
NANOELECTRONICS
Nanotechnology devices
PHOTOELECTRON SPECTROSCOPY
Threshold voltage
ULTRAVIOLET RADIATION
WORK FUNCTIONS
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Summary:An attempt has been made to utilize uniquely high electron mobility of graphene on hexagonal boron nitride (h-BN) to electron emitter. The field emission property of graphene/h-BN/Si structure has shown enhanced threshold voltage and emission current, both of which are key to develop novel vacuum nanoelectronics devices. The field emission property was discussed along with the electronic structure of graphene investigated by Fowler-Nordheim plot and ultraviolet photoelectron spectroscopy. The result suggested that transferring graphene on h-BN modified its work function, which changed field emission mechanism. Our report opens up a possibility of graphene-based vacuum nanoelectronics devices with tuned work function.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4881718