Diamond micro-Raman thermometers for accurate gate temperature measurements

Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors and other devices with high accuracy is an important and challenging issue. A surface-sensitive thermometric technique is demonstrated, utilizing Raman thermography and diamond microparticles to measure the gate...

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Bibliographic Details
Published in:Applied physics letters 2014-05, Vol.104 (21)
Main Authors: Simon, Roland B., Pomeroy, James W., Kuball, Martin
Format: Article
Language:English
Subjects:
ACCURACY
ALUMINIUM COMPOUNDS
Aluminum gallium nitrides
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIAMONDS
ELECTRON MOBILITY
GALLIUM NITRIDES
High electron mobility transistors
METALS
Microparticles
RAMAN EFFECT
Semiconductor devices
SURFACES
TEMPERATURE MEASUREMENT
THERMOGRAPHY
THERMOMETERS
TRANSISTORS
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Summary:Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors and other devices with high accuracy is an important and challenging issue. A surface-sensitive thermometric technique is demonstrated, utilizing Raman thermography and diamond microparticles to measure the gate temperature. This technique enhances peak channel temperature estimation, especially when it is applied in combination with standard micro-Raman thermography. Its application to other metal-covered areas of devices, such as field plates is demonstrated. Furthermore, this technique can be readily applied to other material/device systems.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4879849