Diamond micro-Raman thermometers for accurate gate temperature measurements

Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors and other devices with high accuracy is an important and challenging issue. A surface-sensitive thermometric technique is demonstrated, utilizing Raman thermography and diamond microparticles to measure the gate...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2014-05, Vol.104 (21)
Main Authors: Simon, Roland B., Pomeroy, James W., Kuball, Martin
Format: Article
Language:English
Subjects:
ACCURACY
ALUMINIUM COMPOUNDS
Aluminum gallium nitrides
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIAMONDS
ELECTRON MOBILITY
GALLIUM NITRIDES
High electron mobility transistors
METALS
Microparticles
RAMAN EFFECT
Semiconductor devices
SURFACES
TEMPERATURE MEASUREMENT
THERMOGRAPHY
THERMOMETERS
TRANSISTORS
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c320t-7ed608a9f80ccd0fb03a0d88d287910f630e02fb9019e03f2fc899ff69a585d13
cites cdi_FETCH-LOGICAL-c320t-7ed608a9f80ccd0fb03a0d88d287910f630e02fb9019e03f2fc899ff69a585d13
container_end_page
container_issue 21
container_start_page
container_title Applied physics letters
container_volume 104
creator Simon, Roland B.
Pomeroy, James W.
Kuball, Martin
description Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors and other devices with high accuracy is an important and challenging issue. A surface-sensitive thermometric technique is demonstrated, utilizing Raman thermography and diamond microparticles to measure the gate temperature. This technique enhances peak channel temperature estimation, especially when it is applied in combination with standard micro-Raman thermography. Its application to other metal-covered areas of devices, such as field plates is demonstrated. Furthermore, this technique can be readily applied to other material/device systems.
doi_str_mv 10.1063/1.4879849
format article
fullrecord <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22300155</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2127670626</sourcerecordid><originalsourceid>FETCH-LOGICAL-c320t-7ed608a9f80ccd0fb03a0d88d287910f630e02fb9019e03f2fc899ff69a585d13</originalsourceid><addsrcrecordid>eNpFkEFLAzEUhIMoWKsH_8GCJw9bX5JuNjlKtSoWBNFzSLMvdovZ1CR78N-b0oKXNwx8DPOGkGsKMwqC39HZXLZKztUJmVBo25pTKk_JBAB4LVRDz8lFSttiG8b5hLw-9MaHoat8b2Oo3403Q5U3GH3wmDGmyoVYGWvHaDJWX_uT0e-w2DFi5dGkoh6HnC7JmTPfCa-OOiWfy8ePxXO9ent6WdyvassZ5LrFToA0ykmwtgO3Bm6gk7JjpTkFJzggMLdWQBUCd8xZqZRzQplGNh3lU3JzyA0p9zrZPqPd2DAMaLNmjAPQpvmndjH8jJiy3oYxDqWYZpS1ogXBRKFuD1T5PqWITu9i70381RT0flFN9XFR_gf28Gd4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2127670626</pqid></control><display><type>article</type><title>Diamond micro-Raman thermometers for accurate gate temperature measurements</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP_美国物理联合会现刊（与NSTL共建）</source><creator>Simon, Roland B. ; Pomeroy, James W. ; Kuball, Martin</creator><creatorcontrib>Simon, Roland B. ; Pomeroy, James W. ; Kuball, Martin</creatorcontrib><description>Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors and other devices with high accuracy is an important and challenging issue. A surface-sensitive thermometric technique is demonstrated, utilizing Raman thermography and diamond microparticles to measure the gate temperature. This technique enhances peak channel temperature estimation, especially when it is applied in combination with standard micro-Raman thermography. Its application to other metal-covered areas of devices, such as field plates is demonstrated. Furthermore, this technique can be readily applied to other material/device systems.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4879849</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ACCURACY ; ALUMINIUM COMPOUNDS ; Aluminum gallium nitrides ; Applied physics ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DIAMONDS ; ELECTRON MOBILITY ; GALLIUM NITRIDES ; High electron mobility transistors ; METALS ; Microparticles ; RAMAN EFFECT ; Semiconductor devices ; SURFACES ; TEMPERATURE MEASUREMENT ; THERMOGRAPHY ; THERMOMETERS ; TRANSISTORS</subject><ispartof>Applied physics letters, 2014-05, Vol.104 (21)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-7ed608a9f80ccd0fb03a0d88d287910f630e02fb9019e03f2fc899ff69a585d13</citedby><cites>FETCH-LOGICAL-c320t-7ed608a9f80ccd0fb03a0d88d287910f630e02fb9019e03f2fc899ff69a585d13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,782,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22300155$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Simon, Roland B.</creatorcontrib><creatorcontrib>Pomeroy, James W.</creatorcontrib><creatorcontrib>Kuball, Martin</creatorcontrib><title>Diamond micro-Raman thermometers for accurate gate temperature measurements</title><title>Applied physics letters</title><description>Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors and other devices with high accuracy is an important and challenging issue. A surface-sensitive thermometric technique is demonstrated, utilizing Raman thermography and diamond microparticles to measure the gate temperature. This technique enhances peak channel temperature estimation, especially when it is applied in combination with standard micro-Raman thermography. Its application to other metal-covered areas of devices, such as field plates is demonstrated. Furthermore, this technique can be readily applied to other material/device systems.</description><subject>ACCURACY</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>Aluminum gallium nitrides</subject><subject>Applied physics</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DIAMONDS</subject><subject>ELECTRON MOBILITY</subject><subject>GALLIUM NITRIDES</subject><subject>High electron mobility transistors</subject><subject>METALS</subject><subject>Microparticles</subject><subject>RAMAN EFFECT</subject><subject>Semiconductor devices</subject><subject>SURFACES</subject><subject>TEMPERATURE MEASUREMENT</subject><subject>THERMOGRAPHY</subject><subject>THERMOMETERS</subject><subject>TRANSISTORS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkEFLAzEUhIMoWKsH_8GCJw9bX5JuNjlKtSoWBNFzSLMvdovZ1CR78N-b0oKXNwx8DPOGkGsKMwqC39HZXLZKztUJmVBo25pTKk_JBAB4LVRDz8lFSttiG8b5hLw-9MaHoat8b2Oo3403Q5U3GH3wmDGmyoVYGWvHaDJWX_uT0e-w2DFi5dGkoh6HnC7JmTPfCa-OOiWfy8ePxXO9ent6WdyvassZ5LrFToA0ykmwtgO3Bm6gk7JjpTkFJzggMLdWQBUCd8xZqZRzQplGNh3lU3JzyA0p9zrZPqPd2DAMaLNmjAPQpvmndjH8jJiy3oYxDqWYZpS1ogXBRKFuD1T5PqWITu9i70381RT0flFN9XFR_gf28Gd4</recordid><startdate>20140526</startdate><enddate>20140526</enddate><creator>Simon, Roland B.</creator><creator>Pomeroy, James W.</creator><creator>Kuball, Martin</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140526</creationdate><title>Diamond micro-Raman thermometers for accurate gate temperature measurements</title><author>Simon, Roland B. ; Pomeroy, James W. ; Kuball, Martin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-7ed608a9f80ccd0fb03a0d88d287910f630e02fb9019e03f2fc899ff69a585d13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ACCURACY</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>Aluminum gallium nitrides</topic><topic>Applied physics</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DIAMONDS</topic><topic>ELECTRON MOBILITY</topic><topic>GALLIUM NITRIDES</topic><topic>High electron mobility transistors</topic><topic>METALS</topic><topic>Microparticles</topic><topic>RAMAN EFFECT</topic><topic>Semiconductor devices</topic><topic>SURFACES</topic><topic>TEMPERATURE MEASUREMENT</topic><topic>THERMOGRAPHY</topic><topic>THERMOMETERS</topic><topic>TRANSISTORS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Simon, Roland B.</creatorcontrib><creatorcontrib>Pomeroy, James W.</creatorcontrib><creatorcontrib>Kuball, Martin</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Simon, Roland B.</au><au>Pomeroy, James W.</au><au>Kuball, Martin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Diamond micro-Raman thermometers for accurate gate temperature measurements</atitle><jtitle>Applied physics letters</jtitle><date>2014-05-26</date><risdate>2014</risdate><volume>104</volume><issue>21</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Determining the peak channel temperature in AlGaN/GaN high electron mobility transistors and other devices with high accuracy is an important and challenging issue. A surface-sensitive thermometric technique is demonstrated, utilizing Raman thermography and diamond microparticles to measure the gate temperature. This technique enhances peak channel temperature estimation, especially when it is applied in combination with standard micro-Raman thermography. Its application to other metal-covered areas of devices, such as field plates is demonstrated. Furthermore, this technique can be readily applied to other material/device systems.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4879849</doi><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2014-05, Vol.104 (21)
issn 0003-6951
1077-3118
language eng
recordid cdi_osti_scitechconnect_22300155
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建）
subjects ACCURACY
ALUMINIUM COMPOUNDS
Aluminum gallium nitrides
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIAMONDS
ELECTRON MOBILITY
GALLIUM NITRIDES
High electron mobility transistors
METALS
Microparticles
RAMAN EFFECT
Semiconductor devices
SURFACES
TEMPERATURE MEASUREMENT
THERMOGRAPHY
THERMOMETERS
TRANSISTORS
title Diamond micro-Raman thermometers for accurate gate temperature measurements
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T17%3A51%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Diamond%20micro-Raman%20thermometers%20for%20accurate%20gate%20temperature%20measurements&rft.jtitle=Applied%20physics%20letters&rft.au=Simon,%20Roland%20B.&rft.date=2014-05-26&rft.volume=104&rft.issue=21&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4879849&rft_dat=%3Cproquest_osti_%3E2127670626%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c320t-7ed608a9f80ccd0fb03a0d88d287910f630e02fb9019e03f2fc899ff69a585d13%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2127670626&rft_id=info:pmid/&rfr_iscdi=true