MoS{sub 2} nanotube field effect transistors

We report on electric field effects on electron transport in multi-walled MoS{sub 2} nanotubes (NTs), fabricated using a two-step synthesis method from Mo{sub 6}S{sub x}I{sub 9-x} nanowire bundle precursors. Transport properties were measured on 20 single nanotube field effect transistor (FET) devic...

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Bibliographic Details
Published in:AIP advances 2014-09, Vol.4 (9)
Main Authors: Strojnik, M., Mrzel, A., Buh, J., Strle, J., Kovic, A., Jozef Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana, Mihailovic, D., Center of excellence in Nanoscience and Nanotechnology, Jamova cesta 39, 1000 Ljubljana
Format: Article
Language:English
Subjects:
DEFECTS
ELECTRIC FIELDS
FABRICATION
FIELD EFFECT TRANSISTORS
LAYERS
MATERIALS SCIENCE
MOLYBDENUM SULFIDES
NANOSCIENCE AND NANOTECHNOLOGY
NANOTUBES
SYNTHESIS
TUNGSTEN SULFIDES
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Summary:We report on electric field effects on electron transport in multi-walled MoS{sub 2} nanotubes (NTs), fabricated using a two-step synthesis method from Mo{sub 6}S{sub x}I{sub 9-x} nanowire bundle precursors. Transport properties were measured on 20 single nanotube field effect transistor (FET) devices, and compared with MoS{sub 2} layered crystal devices prepared using identical fabrication techniques. The NTs exhibited mobilities of up to 0.014 cm{sup 2}V{sup −1}s{sup −1} and an on/off ratio of up to 60. As such they are comparable with previously reported WS{sub 2} nanotube FETs, but materials defects and imperfections apparently limit their performance compared with multilayer MoS{sub 2} FETs with similar number of layers.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4894440