Low-voltage-operation avalanche photodiode based on n-gallium oxide/p-crystalline selenium heterojunction

In this study, we demonstrate the avalanche multiplication phenomenon in a crystalline-selenium (c-Se)-based heterojunction photodiode. The carrier injection from an external electrode, which is considered to be the major factor contributing to dark current at a high electric field, was significantl...

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Bibliographic Details
Published in:Applied physics letters 2014-06, Vol.104 (24)
Main Authors: Imura, S., Kikuchi, K., Miyakawa, K., Ohtake, H., Kubota, M.
Format: Article
Language:English
Subjects:
Applied physics
Avalanche diodes
Carrier density
Carrier injection
CARRIERS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Crystal structure
Crystallinity
CURRENTS
Dark current
DIFFUSION BARRIERS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRIC POTENTIAL
GALLIUM OXIDES
HETEROJUNCTIONS
INJECTION
LAYERS
Multiplication
Photodiodes
QUANTUM EFFICIENCY
SELENIUM
Threshold voltage
TIN ADDITIONS
TOWNSEND DISCHARGE
WAVELENGTHS
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Summary:In this study, we demonstrate the avalanche multiplication phenomenon in a crystalline-selenium (c-Se)-based heterojunction photodiode. The carrier injection from an external electrode, which is considered to be the major factor contributing to dark current at a high electric field, was significantly decreased by employing a thin n-type Ga2O3 layer with a high hole-injection barrier. The fabricated Ga2O3/c-Se diode exhibited extremely high external quantum efficiency of over 100% in the short-wavelength region at a relatively low reverse-bias voltage of ∼20 V. Furthermore, Sn-doping of the Ga2O3 layer increases the carrier concentration; hence, the resulting device has a lower threshold voltage for avalanche multiplication.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4883649