Growth and characterization of horizontal GaN wires on silicon

We report the growth of in-plane GaN wires on silicon by metalorganic chemical vapor deposition. Triangular-shaped GaN microwires with semi-polar sidewalls are observed to grow on top of a GaN/Si template patterned with nano-porous SiO2. With a length-to-thickness ratio ∼200, the GaN wires are well...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2014-06, Vol.104 (26)
Main Authors: Zou, Xinbo, Lu, Xing, Lucas, Ryan, Kuech, Thomas F., Choi, Jonathan W., Gopalan, Padma, May Lau, Kei
Format: Article
Language:English
Subjects:
Applied physics
CHEMICAL VAPOR DEPOSITION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
DEFECTS
DENSITY
ELECTRIC CONDUCTIVITY
GALLIUM NITRIDES
Heterostructures
Metalorganic chemical vapor deposition
Organic chemistry
Photonics
POROUS MATERIALS
RAMAN EFFECT
SILICA
SILICON
Silicon dioxide
SILICON OXIDES
STACKING FAULTS
STRESSES
THICKNESS
Thickness ratio
TRANSMISSION ELECTRON MICROSCOPY
Wire
WIRES
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the growth of in-plane GaN wires on silicon by metalorganic chemical vapor deposition. Triangular-shaped GaN microwires with semi-polar sidewalls are observed to grow on top of a GaN/Si template patterned with nano-porous SiO2. With a length-to-thickness ratio ∼200, the GaN wires are well aligned along the three equivalent 〈112¯0〉 directions. Micro-Raman measurements indicate negligible stress and a low defect density inside the wires. Stacking faults were found to be the only defect type in the GaN wire by cross-sectional transmission electron microscopy. The GaN wires exhibited high conductivity, and the resistivity was 20–30 mΩ cm, regardless of the wire thickness. With proper heterostructure and doping design, these highly aligned GaN wires are promising for photonic and electronic applications monolithically integrated on silicon.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4886126