Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by v...

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Bibliographic Details
Published in:Applied physics letters 2014-07, Vol.105 (1)
Main Authors: Roland, I., Zeng, Y., Han, Z., Checoury, X., Blin, C., El Kurdi, M., Ghrib, A., Sauvage, S., Gayral, B., Brimont, C., Guillet, T., Semond, F., Boucaud, P.
Format: Article
Language:English
Subjects:
ABSORPTION
Applied physics
CAVITY RESONATORS
Condensed Matter
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
Dependence
GALLIUM NITRIDES
HOLES
LOSSES
NEAR INFRARED RADIATION
Other
Periodic variations
PERIODICITY
Photonic crystals
Physics
QUALITY FACTOR
RESONANCE
SILICON
Silicon substrates
SUBSTRATES
TRANSMISSION
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Summary:We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ∼7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4887065