Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm

• Published in: Applied physics letters 2014-07, Vol.105 (1)
• Main Authors: Zhang, Pengzhan, Chen, Kunji, Dong, Hengping, Zhang, Pei, Fang, Zhonghui, Li, Wei, Xu, Jun, Huang, Xinfan
• Format: Article
• Language: English
• Subjects: Amorphous silicon; AMORPHOUS STATE; Applied physics; CHEMICAL VAPOR DEPOSITION; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Efficiency; EXTRACTION; NANOSTRUCTURES; Organic chemistry; OXIDATION; PHOTOLUMINESCENCE; Photovoltaic cells; PLASMA; Plasma enhanced chemical vapor deposition; QUANTUM EFFICIENCY; REFLECTIVITY; SILICON; Silicon oxynitride; TEMPERATURE DEPENDENCE; THIN FILMS; VISIBLE RADIATION; WAVELENGTHS
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4887058

We reported the study on the photoluminescence internal quantum efficiency (PL IQE) and external quantum efficiency (PL EQE) from the amorphous silicon oxynitride (a-SiNO) films, which were fabricated by plasma-enhanced chemical vapor deposition followed by in situ plasma oxidation. We employed the direct measurement of absolute quantum efficiency within a calibrated integration sphere to obtain the PL EQE. Then, we calculated the PL IQE by combing the measured EQE and optical parameters of light extraction factor, reflectivity, and transmittance of the a-SiNO thin films. We also derived the PL QE through investigating the characteristic of the temperature dependent PL. These results show that the PL IQE as high as 60% has been achieved at peak wavelength of about 470 nm, which is much higher than that of Si nanocrystal embedded thin films.