Indium tin oxide/InGaZnO bilayer stacks for enhanced mobility and optical stability in amorphous oxide thin film transistors

Optically more stable, high mobility InGaZnO thin film transistors were fabricated by implementing ultrathin In2O3-SnO2 (ITO) layers at the gate dielectric/semiconductor interface. The optimized device portrayed a high saturation mobility of ∼80 cm2/V s with off current values lower than 10−11A. The...

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Bibliographic Details
Published in:Applied physics letters 2014-07, Vol.105 (1)
Main Authors: Chung, Yoon Jang, Kim, Un Ki, Hwang, Eun Suk, Hwang, Cheol Seong
Format: Article
Language:English
Subjects:
Applied physics
Bilayers
CARRIER MOBILITY
CHARGE CARRIERS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Current carriers
CURRENTS
DIELECTRIC MATERIALS
FILTERS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM OXIDES
Indium tin oxides
INTERFACES
LAYERS
SATURATION
Semiconductor devices
SEMICONDUCTOR MATERIALS
STABILITY
STRESSES
Thin film transistors
THIN FILMS
Threshold voltage
Tin dioxide
TIN OXIDES
TRANSISTORS
ZINC OXIDES
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Summary:Optically more stable, high mobility InGaZnO thin film transistors were fabricated by implementing ultrathin In2O3-SnO2 (ITO) layers at the gate dielectric/semiconductor interface. The optimized device portrayed a high saturation mobility of ∼80 cm2/V s with off current values lower than 10−11A. The ITO layer also acted as a hole filter layer, and hole current and threshold voltage shift values measured under negative bias illumination conditions showed that a significant amount of photo-generated charge carriers were annihilated before reaching the gate insulator. This effect was more evident at larger intensities, showing threshold voltage shift values reduced by more than ∼70% under stress conditions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4889856