Direct growth of graphene on Si(111)

Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an e...

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Bibliographic Details
Published in:Journal of applied physics 2014-06, Vol.115 (22)
Main Authors: Thanh Trung, Pham, Campos-Delgado, Jessica, Joucken, Frédéric, Colomer, Jean-François, Hackens, Benoît, Raskin, Jean-Pierre, Santos, Cristiane N., Robert, Sporken
Format: Article
Language:English
Subjects:
ATOMIC FORCE MICROSCOPY
AUGER ELECTRON SPECTROSCOPY
CRYSTAL GROWTH
CURRENTS
DEPOSITION
Electron beam evaporators
ELECTRON BEAMS
ELECTRON DIFFRACTION
GRAPHENE
Integrated circuits
Microscopy
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
Photoelectric emission
PHOTOEMISSION
RAMAN SPECTROSCOPY
RESOLUTION
SCANNING ELECTRON MICROSCOPY
SCANNING TUNNELING MICROSCOPY
SILICON
Spectrum analysis
Time dependence
X RADIATION
X ray spectra
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Summary:Due to the need of integrated circuit in the current silicon technology, the formation of graphene on Si wafer is highly desirable, but is still a challenge for the scientific community. In this context, we report the direct growth of graphene on Si(111) wafer under appropriate conditions using an electron beam evaporator. The structural quality of the material is investigated in detail by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, high resolution scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. Our experimental results confirm that the quality of graphene is strongly dependent on the growth time during carbon atoms deposition.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4882181