Time evolution studies of laser induced chemical changes in InAs nanowire using Raman spectroscopy

We report the study of time evolution of chemical changes on the surface of an InAs nanowire (NW) on laser irradiation in different power density regime, using Raman spectroscopy for a time span of 8–16 min. Mixture of metastable oxides like InAsO4, As2O3 are formed upon oxidation, which are reflect...

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Bibliographic Details
Published in:Applied physics letters 2014-07, Vol.105 (1)
Main Authors: Pal, Suparna, Aggarwal, R., Kumari Gupta, Vandna, Ingale, Alka
Format: Article
Language:English
Subjects:
Applied physics
Arsenic
ARSENIC OXIDES
Evolution
FABRICATION
INDIUM ARSENIDES
LASER RADIATION
LASERS
LAYERS
MODIFICATIONS
NANOSCIENCE AND NANOTECHNOLOGY
NANOWIRES
Organic chemistry
OXIDATION
POWER DENSITY
RAMAN SPECTROSCOPY
Spectrum analysis
SURFACES
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Summary:We report the study of time evolution of chemical changes on the surface of an InAs nanowire (NW) on laser irradiation in different power density regime, using Raman spectroscopy for a time span of 8–16 min. Mixture of metastable oxides like InAsO4, As2O3 are formed upon oxidation, which are reflected as sharp Raman peaks at ∼240–254 and 180–200 cm−1. Evidence of removal of arsenic layer by layer is also observed at higher power density. Position controlled laser induced chemical modification on a nanometer scale, without changing the core of the NW, can be useful for NW based device fabrication.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4890212