Influence of composition and substrate miscut on the evolution of (105)-terminated in-plane Si{sub 1−x}Ge{sub x} quantum wires on Si(001)

Isolated in-plane wires on Si(001) are promising nanostructures for quantum transport applications. They can be fabricated in a catalyst-free process by thermal annealing of self-organized Si{sub 1−x}Ge{sub x} hut clusters. Here, we report on the influence of composition and small substrate miscuts...

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Bibliographic Details
Published in:APL materials 2014-07, Vol.2 (7)
Main Authors: Watzinger, H., Glaser, M., Zhang, J. J., Daruka, I., Schäffler, F.
Format: Article
Language:English
Subjects:
ANNEALING
CATALYSTS
KINETICS
MATERIALS SCIENCE
NANOSCIENCE AND NANOTECHNOLOGY
QUANTUM WIRES
SUBSTRATES
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Summary:Isolated in-plane wires on Si(001) are promising nanostructures for quantum transport applications. They can be fabricated in a catalyst-free process by thermal annealing of self-organized Si{sub 1−x}Ge{sub x} hut clusters. Here, we report on the influence of composition and small substrate miscuts on the unilateral wire growth during annealing at 570 °C. The addition of up to 20% of Si mainly affects the growth kinetics in the presence of energetically favorable sinks for diffusing Ge atoms, but does not significantly change the wire base width. For the investigated substrate miscuts of
ISSN:2166-532X
2166-532X
DOI:10.1063/1.4886218