Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis

CuWO4 thin-films were deposited by pulsed laser deposition onto an insulating substrate. The temperature dependence of the electronic conductivity of CuWO4 thin-films was determined over 100–500°C temperature range in a synthetic air atmosphere. Additionally, variations of conductivity at 300°C and...

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Bibliographic Details
Published in:Journal of solid state chemistry 2013-05, Vol.201, p.35-40
Main Authors: Gonzalez, Carlos M., Dunford, Jeffrey L., Du, Xiaomei, Post, Michael L.
Format: Article
Language:English
Subjects:
ACTIVATION ENERGY
Conductivity
Conductometric analysis
COPPER TUNGSTATES
Cross-disciplinary physics: materials science
rheology
Deposition
DEPOSITS
Electrical conduction
Electron transport
Electronics
ELECTRONS
ENERGY BEAM DEPOSITION
Exact sciences and technology
INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY
Laser deposition
LASER RADIATION
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
OXIDES
OXYGEN
Oxygen states
PARTIAL PRESSURE
Physics
PULSED IRRADIATION
Pulsed laser deposition
Resistivity
Semiconducting metal-oxide
SUBSTRATES
Surface characterization
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
THIN FILMS
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Description
Summary:CuWO4 thin-films were deposited by pulsed laser deposition onto an insulating substrate. The temperature dependence of the electronic conductivity of CuWO4 thin-films was determined over 100–500°C temperature range in a synthetic air atmosphere. Additionally, variations of conductivity at 300°C and 500°C have been measured for oxygen partial pressures (0.1atm
ISSN:0022-4596
1095-726X
DOI:10.1016/j.jssc.2013.02.002