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Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis
CuWO4 thin-films were deposited by pulsed laser deposition onto an insulating substrate. The temperature dependence of the electronic conductivity of CuWO4 thin-films was determined over 100–500°C temperature range in a synthetic air atmosphere. Additionally, variations of conductivity at 300°C and...
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Published in: | Journal of solid state chemistry 2013-05, Vol.201, p.35-40 |
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creator | Gonzalez, Carlos M. Dunford, Jeffrey L. Du, Xiaomei Post, Michael L. |
description | CuWO4 thin-films were deposited by pulsed laser deposition onto an insulating substrate. The temperature dependence of the electronic conductivity of CuWO4 thin-films was determined over 100–500°C temperature range in a synthetic air atmosphere. Additionally, variations of conductivity at 300°C and 500°C have been measured for oxygen partial pressures (0.1atm |
doi_str_mv | 10.1016/j.jssc.2013.02.002 |
format | article |
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Formation of oxygen states in n-type semiconducting metal-oxides and its effect on the surface electrochemical potential and electron transport. [Display omitted]
► The study of surface species in CuWO4 thin-films was carried using conductometry. ► The determination of the apparent activation energy of conduction with temperature is outlined. ► Temperature and O2 concentration effects on the oxygen states was established. ► For the ranges of temperature studied, the identified operating oxygen states were O2− and O−.</description><identifier>ISSN: 0022-4596</identifier><identifier>EISSN: 1095-726X</identifier><identifier>DOI: 10.1016/j.jssc.2013.02.002</identifier><identifier>CODEN: JSSCBI</identifier><language>eng</language><publisher>Amsterdam: Elsevier Inc</publisher><subject>ACTIVATION ENERGY ; Conductivity ; Conductometric analysis ; COPPER TUNGSTATES ; Cross-disciplinary physics: materials science; rheology ; Deposition ; DEPOSITS ; Electrical conduction ; Electron transport ; Electronics ; ELECTRONS ; ENERGY BEAM DEPOSITION ; Exact sciences and technology ; INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY ; Laser deposition ; LASER RADIATION ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; OXIDES ; OXYGEN ; Oxygen states ; PARTIAL PRESSURE ; Physics ; PULSED IRRADIATION ; Pulsed laser deposition ; Resistivity ; Semiconducting metal-oxide ; SUBSTRATES ; Surface characterization ; TEMPERATURE DEPENDENCE ; TEMPERATURE RANGE ; THIN FILMS</subject><ispartof>Journal of solid state chemistry, 2013-05, Vol.201, p.35-40</ispartof><rights>2013</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c435t-544f4097e00a303c69611f7f6fb4e0c1751067fab9930b6caf0a9c97e6e53e93</citedby><cites>FETCH-LOGICAL-c435t-544f4097e00a303c69611f7f6fb4e0c1751067fab9930b6caf0a9c97e6e53e93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27312337$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/22306263$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Gonzalez, Carlos M.</creatorcontrib><creatorcontrib>Dunford, Jeffrey L.</creatorcontrib><creatorcontrib>Du, Xiaomei</creatorcontrib><creatorcontrib>Post, Michael L.</creatorcontrib><title>Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis</title><title>Journal of solid state chemistry</title><description>CuWO4 thin-films were deposited by pulsed laser deposition onto an insulating substrate. The temperature dependence of the electronic conductivity of CuWO4 thin-films was determined over 100–500°C temperature range in a synthetic air atmosphere. Additionally, variations of conductivity at 300°C and 500°C have been measured for oxygen partial pressures (0.1atm<p(O2)<0.9atm) in nitrogen. The apparent activation energy ΔEa for the electrical conduction has been estimated. The study of the temperature effect on the electron transport properties of CuWO4 thin-films reveals the operation of two temperature-dependent oxygen states. The effect of varying oxygen concentration on the electronic properties is discussed in detail. The electrochemical nature of the operating oxygen states for 100–500°C temperature range is deduced using a physicochemical model that relates electronic conductivity with oxygen partial pressure and temperature.
Formation of oxygen states in n-type semiconducting metal-oxides and its effect on the surface electrochemical potential and electron transport. [Display omitted]
► The study of surface species in CuWO4 thin-films was carried using conductometry. ► The determination of the apparent activation energy of conduction with temperature is outlined. ► Temperature and O2 concentration effects on the oxygen states was established. ► For the ranges of temperature studied, the identified operating oxygen states were O2− and O−.</description><subject>ACTIVATION ENERGY</subject><subject>Conductivity</subject><subject>Conductometric analysis</subject><subject>COPPER TUNGSTATES</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition</subject><subject>DEPOSITS</subject><subject>Electrical conduction</subject><subject>Electron transport</subject><subject>Electronics</subject><subject>ELECTRONS</subject><subject>ENERGY BEAM DEPOSITION</subject><subject>Exact sciences and technology</subject><subject>INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY</subject><subject>Laser deposition</subject><subject>LASER RADIATION</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>OXIDES</subject><subject>OXYGEN</subject><subject>Oxygen states</subject><subject>PARTIAL PRESSURE</subject><subject>Physics</subject><subject>PULSED IRRADIATION</subject><subject>Pulsed laser deposition</subject><subject>Resistivity</subject><subject>Semiconducting metal-oxide</subject><subject>SUBSTRATES</subject><subject>Surface characterization</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>TEMPERATURE RANGE</subject><subject>THIN FILMS</subject><issn>0022-4596</issn><issn>1095-726X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kU2LFDEQhhtRcFz9A54CInjpsfLR6W3wIsP6AQt7WdBbqMlUnAzd6TGVXlh_vWlm8eipoOqpqpf3bZq3ErYSpP142p6Y_VaB1FtQWwD1rNlIGLq2V_bn82ZTO6o13WBfNq-YTwBSdtdm00y7I2b0hXL8gyXOScxBeMw5UhZcsBCLmMRu-XFnRDnG1IY4TiywCBrpoc4PotB0poxlyRVeOKZfws_psPgyT1Ry9AITjo8c-XXzIuDI9OapXjX3X27ud9_a27uv33efb1tvdFfazphgYOgJADVobwcrZeiDDXtD4GXfSbB9wP0waNhbjwFw8JW31Gka9FXz7nJ25hId-1jIH6ukRL44pTRYZXWlPlyoc55_L8TFTZE9jSMmmhd2spPaXEMHpqLqgvo8M2cK7pzjhPnRSXBrAO7k1gDcGoAD5ardden9031kj2PImHzkf5uq11Jp3Vfu04Wj6shD9X1VTMnTIeZV8GGO_3vzFx-7nM0</recordid><startdate>20130501</startdate><enddate>20130501</enddate><creator>Gonzalez, Carlos M.</creator><creator>Dunford, Jeffrey L.</creator><creator>Du, Xiaomei</creator><creator>Post, Michael L.</creator><general>Elsevier Inc</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20130501</creationdate><title>Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis</title><author>Gonzalez, Carlos M. ; Dunford, Jeffrey L. ; Du, Xiaomei ; Post, Michael L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c435t-544f4097e00a303c69611f7f6fb4e0c1751067fab9930b6caf0a9c97e6e53e93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>ACTIVATION ENERGY</topic><topic>Conductivity</topic><topic>Conductometric analysis</topic><topic>COPPER TUNGSTATES</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition</topic><topic>DEPOSITS</topic><topic>Electrical conduction</topic><topic>Electron transport</topic><topic>Electronics</topic><topic>ELECTRONS</topic><topic>ENERGY BEAM DEPOSITION</topic><topic>Exact sciences and technology</topic><topic>INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY</topic><topic>Laser deposition</topic><topic>LASER RADIATION</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>OXIDES</topic><topic>OXYGEN</topic><topic>Oxygen states</topic><topic>PARTIAL PRESSURE</topic><topic>Physics</topic><topic>PULSED IRRADIATION</topic><topic>Pulsed laser deposition</topic><topic>Resistivity</topic><topic>Semiconducting metal-oxide</topic><topic>SUBSTRATES</topic><topic>Surface characterization</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>TEMPERATURE RANGE</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gonzalez, Carlos M.</creatorcontrib><creatorcontrib>Dunford, Jeffrey L.</creatorcontrib><creatorcontrib>Du, Xiaomei</creatorcontrib><creatorcontrib>Post, Michael L.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of solid state chemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gonzalez, Carlos M.</au><au>Dunford, Jeffrey L.</au><au>Du, Xiaomei</au><au>Post, Michael L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis</atitle><jtitle>Journal of solid state chemistry</jtitle><date>2013-05-01</date><risdate>2013</risdate><volume>201</volume><spage>35</spage><epage>40</epage><pages>35-40</pages><issn>0022-4596</issn><eissn>1095-726X</eissn><coden>JSSCBI</coden><abstract>CuWO4 thin-films were deposited by pulsed laser deposition onto an insulating substrate. The temperature dependence of the electronic conductivity of CuWO4 thin-films was determined over 100–500°C temperature range in a synthetic air atmosphere. Additionally, variations of conductivity at 300°C and 500°C have been measured for oxygen partial pressures (0.1atm<p(O2)<0.9atm) in nitrogen. The apparent activation energy ΔEa for the electrical conduction has been estimated. The study of the temperature effect on the electron transport properties of CuWO4 thin-films reveals the operation of two temperature-dependent oxygen states. The effect of varying oxygen concentration on the electronic properties is discussed in detail. The electrochemical nature of the operating oxygen states for 100–500°C temperature range is deduced using a physicochemical model that relates electronic conductivity with oxygen partial pressure and temperature.
Formation of oxygen states in n-type semiconducting metal-oxides and its effect on the surface electrochemical potential and electron transport. [Display omitted]
► The study of surface species in CuWO4 thin-films was carried using conductometry. ► The determination of the apparent activation energy of conduction with temperature is outlined. ► Temperature and O2 concentration effects on the oxygen states was established. ► For the ranges of temperature studied, the identified operating oxygen states were O2− and O−.</abstract><cop>Amsterdam</cop><pub>Elsevier Inc</pub><doi>10.1016/j.jssc.2013.02.002</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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subjects | ACTIVATION ENERGY Conductivity Conductometric analysis COPPER TUNGSTATES Cross-disciplinary physics: materials science rheology Deposition DEPOSITS Electrical conduction Electron transport Electronics ELECTRONS ENERGY BEAM DEPOSITION Exact sciences and technology INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY Laser deposition LASER RADIATION Materials science Methods of deposition of films and coatings film growth and epitaxy OXIDES OXYGEN Oxygen states PARTIAL PRESSURE Physics PULSED IRRADIATION Pulsed laser deposition Resistivity Semiconducting metal-oxide SUBSTRATES Surface characterization TEMPERATURE DEPENDENCE TEMPERATURE RANGE THIN FILMS |
title | Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis |
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