A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

A novel Micro-Raman technique was designed and used to detect extended defects in 4H-SiC homoepitaxy. The technique uses above band-gap high-power laser densities to induce a local increase of free carriers in undoped epitaxies (n 

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Bibliographic Details
Published in:Journal of applied physics 2014-10, Vol.116 (16)
Main Authors: Piluso, N., Camarda, M., La Via, F.
Format: Article
Language:English
Subjects:
Applied physics
CARRIER DENSITY
CARRIER LIFETIME
CARRIER MOBILITY
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Coupled modes
Coupling
Crystal defects
CRYSTALLOGRAPHY
DETECTION
Doped films
DOPED MATERIALS
EPITAXY
Fault detection
IMPURITIES
INJECTION
Mathematical morphology
OPTICAL MODES
Optical properties
PHOTOLUMINESCENCE
POINT DEFECTS
Polytypes
RAMAN EFFECT
SCATTERING
SILICON CARBIDES
SPATIAL RESOLUTION
SPECTROSCOPY
STACKING FAULTS
STRESSES
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Description
Summary:A novel Micro-Raman technique was designed and used to detect extended defects in 4H-SiC homoepitaxy. The technique uses above band-gap high-power laser densities to induce a local increase of free carriers in undoped epitaxies (n 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4899985