Electron holography of devices with epitaxial layers

Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V0 = 12.75 V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge...

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Bibliographic Details
Published in:Journal of applied physics 2014-11, Vol.116 (17)
Main Authors: Gribelyuk, M. A., Ontalus, V., Baumann, F. H., Zhu, Z., Holt, J. R.
Format: Article
Language:English
Subjects:
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CORRELATIONS
Data acquisition
Density functional theory
DIFFUSION
Diffusion effects
Dopants
ELECTRON DIFFRACTION
ELECTRONS
Epitaxial layers
EPITAXY
FIELD EFFECT TRANSISTORS
GERMANIUM
GERMANIUM SILICIDES
HOLOGRAPHY
LAYERS
Semiconductor devices
SILICON
Silicon germanides
SIMULATION
STRAINS
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Summary:Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V0 = 12.75 V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content CGe = 18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L = 30 nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4898859