Theoretical interpretation of the electron mobility behavior in InAs nanowires

This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is va...

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Bibliographic Details
Published in:Journal of applied physics 2014-11, Vol.116 (17)
Main Authors: Marin, E. G., Ruiz, F. G., Godoy, A., Tienda-Luna, I. M., Martínez-Blanque, C., Gámiz, F.
Format: Article
Language:English
Subjects:
Applied physics
BOLTZMANN EQUATION
Boltzmann transport equation
CARRIER DENSITY
Dependence
ELECTRIC FIELDS
ELECTRON MOBILITY
Group III-V semiconductors
INDIUM ARSENIDES
Mathematical analysis
NANOSCIENCE AND NANOTECHNOLOGY
NANOWIRES
OSCILLATIONS
PHONONS
QUANTUM WIRES
RELAXATION TIME
SCATTERING
SEMICONDUCTOR MATERIALS
Surface roughness
SURFACES
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Summary:This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4900980