Effect of deposition times on structure of Ga-doped ZnO thin films as humidity sensor

Gallium doped zinc oxide (GZO) has good electrical property. It is widely used as transparent electrode in photovoltaic devices, and sensing element in gas and pressure sensors. GZO thin film was prepared using magnetron sputtering. Film deposition times were set at 10, 15, 20, 25 and 30 minutes to...

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Bibliographic Details
Main Authors: Shahira, Khalid Faridzatul, Awang Rozidawati
Format: Conference Proceeding
Language:English
Subjects:
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Deposition
DOPED MATERIALS
ELECTRICAL PROPERTIES
Gallium
HUMIDITY
Magnetron sputtering
MATERIALS SCIENCE
Morphology
Photomicrographs
Photovoltaic cells
Pressure sensors
SENSORS
Solar cells
SPUTTERING
Thickness
THIN FILMS
Wurtzite
X-RAY DIFFRACTION
Zinc oxide
ZINC OXIDES
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Summary:Gallium doped zinc oxide (GZO) has good electrical property. It is widely used as transparent electrode in photovoltaic devices, and sensing element in gas and pressure sensors. GZO thin film was prepared using magnetron sputtering. Film deposition times were set at 10, 15, 20, 25 and 30 minutes to get samples of different thickness. X-ray diffraction (XRD) was used to determine the structure of GZO thin films. Structure for GZO thin film is hexagonal wurtzite structure. Morphology and thickness of GZO thin films was observed from FESEM micrographs. Grain size and thickness of thin films improved with increasing deposition times. However, increasing the thickness of thin films occur below 25 minutes only. Electrical properties of GZO thin films were studied using a four-point probe technique. The changes in the structure of the thin films lead to the changed of their electrical properties resulting in the reduction of the film resistance. These thin films properties significantly implying the potential application of the sample as a humidity sensor.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4895162