Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 1014 to 1 × 1016 cm−2. Structural properties studied by x-ray diffraction and Raman-scatter...

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Bibliographic Details
Published in:Journal of applied physics 2014-07, Vol.116 (4)
Main Authors: Lo, Fang-Yuh, Huang, Cheng-De, Chou, Kai-Chieh, Guo, Jhong-Yu, Liu, Hsiang-Lin, Ney, Verena, Ney, Andreas, Shvarkov, Stepan, Pezzagna, Sébastien, Reuter, Dirk, Chia, Chi-Ta, Chern, Ming-Yau, Wieck, Andreas D., Massies, Jean
Format: Article
Language:English
Subjects:
ANNEALING
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
Emission analysis
EMISSION SPECTRA
Epitaxial growth
FERROMAGNETISM
GALLIUM NITRIDES
ION BEAMS
ION IMPLANTATION
KEV RANGE 100-1000
MAGNETIC PROPERTIES
Magnetism
MAGNETIZATION
MOLECULAR BEAM EPITAXY
Optical measurement
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
RAMAN EFFECT
Samarium
SAMARIUM IONS
SPECTROSCOPY
Spectrum analysis
SQUID DEVICES
Superconducting quantum interference devices
THIN FILMS
X ray spectra
X-RAY DIFFRACTION
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Summary:Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 1014 to 1 × 1016 cm−2. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 1015 cm−2 before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4891226