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Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films

Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 1014 to 1 × 1016 cm−2. Structural properties studied by x-ray diffraction and Raman-scatter...

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Published in:	Journal of applied physics 2014-07, Vol.116 (4)
Main Authors:	Lo, Fang-Yuh, Huang, Cheng-De, Chou, Kai-Chieh, Guo, Jhong-Yu, Liu, Hsiang-Lin, Ney, Verena, Ney, Andreas, Shvarkov, Stepan, Pezzagna, Sébastien, Reuter, Dirk, Chia, Chi-Ta, Chern, Ming-Yau, Wieck, Andreas D., Massies, Jean
Format:	Article
Language:	English
Subjects:	ANNEALING Applied physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL STRUCTURE Emission analysis EMISSION SPECTRA Epitaxial growth FERROMAGNETISM GALLIUM NITRIDES ION BEAMS ION IMPLANTATION KEV RANGE 100-1000 MAGNETIC PROPERTIES Magnetism MAGNETIZATION MOLECULAR BEAM EPITAXY Optical measurement OPTICAL PROPERTIES PHOTOLUMINESCENCE PHYSICAL RADIATION EFFECTS RAMAN EFFECT Samarium SAMARIUM IONS SPECTROSCOPY Spectrum analysis SQUID DEVICES Superconducting quantum interference devices THIN FILMS X ray spectra X-RAY DIFFRACTION
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container_title	Journal of applied physics
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creator	Lo, Fang-Yuh Huang, Cheng-De Chou, Kai-Chieh Guo, Jhong-Yu Liu, Hsiang-Lin Ney, Verena Ney, Andreas Shvarkov, Stepan Pezzagna, Sébastien Reuter, Dirk Chia, Chi-Ta Chern, Ming-Yau Wieck, Andreas D. Massies, Jean
description	Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 1014 to 1 × 1016 cm−2. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 1015 cm−2 before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.
doi_str_mv	10.1063/1.4891226
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The implantation doses range from 1 × 1014 to 1 × 1016 cm−2. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 1015 cm−2 before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4891226</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ANNEALING ; Applied physics ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTAL STRUCTURE ; Emission analysis ; EMISSION SPECTRA ; Epitaxial growth ; FERROMAGNETISM ; GALLIUM NITRIDES ; ION BEAMS ; ION IMPLANTATION ; KEV RANGE 100-1000 ; MAGNETIC PROPERTIES ; Magnetism ; MAGNETIZATION ; MOLECULAR BEAM EPITAXY ; Optical measurement ; OPTICAL PROPERTIES ; PHOTOLUMINESCENCE ; PHYSICAL RADIATION EFFECTS ; RAMAN EFFECT ; Samarium ; SAMARIUM IONS ; SPECTROSCOPY ; Spectrum analysis ; SQUID DEVICES ; Superconducting quantum interference devices ; THIN FILMS ; X ray spectra ; X-RAY DIFFRACTION</subject><ispartof>Journal of applied physics, 2014-07, Vol.116 (4)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-7c508cf6984a81e8ee35d658c4173a158f7ad1804ade9a80a9a2a79b5f67b00e3</citedby><cites>FETCH-LOGICAL-c351t-7c508cf6984a81e8ee35d658c4173a158f7ad1804ade9a80a9a2a79b5f67b00e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22308542$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Lo, Fang-Yuh</creatorcontrib><creatorcontrib>Huang, Cheng-De</creatorcontrib><creatorcontrib>Chou, Kai-Chieh</creatorcontrib><creatorcontrib>Guo, Jhong-Yu</creatorcontrib><creatorcontrib>Liu, Hsiang-Lin</creatorcontrib><creatorcontrib>Ney, Verena</creatorcontrib><creatorcontrib>Ney, Andreas</creatorcontrib><creatorcontrib>Shvarkov, Stepan</creatorcontrib><creatorcontrib>Pezzagna, Sébastien</creatorcontrib><creatorcontrib>Reuter, Dirk</creatorcontrib><creatorcontrib>Chia, Chi-Ta</creatorcontrib><creatorcontrib>Chern, Ming-Yau</creatorcontrib><creatorcontrib>Wieck, Andreas D.</creatorcontrib><creatorcontrib>Massies, Jean</creatorcontrib><title>Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films</title><title>Journal of applied physics</title><description>Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. 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The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.</description><subject>ANNEALING</subject><subject>Applied physics</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL STRUCTURE</subject><subject>Emission analysis</subject><subject>EMISSION SPECTRA</subject><subject>Epitaxial growth</subject><subject>FERROMAGNETISM</subject><subject>GALLIUM NITRIDES</subject><subject>ION BEAMS</subject><subject>ION IMPLANTATION</subject><subject>KEV RANGE 100-1000</subject><subject>MAGNETIC PROPERTIES</subject><subject>Magnetism</subject><subject>MAGNETIZATION</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>Optical measurement</subject><subject>OPTICAL PROPERTIES</subject><subject>PHOTOLUMINESCENCE</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>RAMAN EFFECT</subject><subject>Samarium</subject><subject>SAMARIUM IONS</subject><subject>SPECTROSCOPY</subject><subject>Spectrum analysis</subject><subject>SQUID DEVICES</subject><subject>Superconducting quantum interference devices</subject><subject>THIN FILMS</subject><subject>X ray spectra</subject><subject>X-RAY DIFFRACTION</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkE9LAzEUxIMoWKsHv0HAk-DWvGSzSY5StApFD9WbENJstpuy_0xSod_eLS14evPgxzAzCN0CmQEp2CPMcqmA0uIMTYBIlQnOyTmaEEIhk0qoS3QV45YQAMnUBH2vUtjZtAumecD9kLw9CNOVuDWbzo0_HkI_uJC8i7ivcO03dbPPgos-Jv_r8KrNfDs0pkuuxAvzjlPtO1z5po3X6KIyTXQ3pztFXy_Pn_PXbPmxeJs_LTPLOKRMWE6krQolcyPBSecYLwsubQ6CGeCyEqYESXJTOmUkMcpQI9SaV4VYE-LYFN0dffsxko7WJ2dr23eds0lTyojkOf2nxkI_OxeT3va70I3BNAVacMFByZG6P1I29DEGV-kh-NaEvQaiDxNr0KeJ2R-UvG0H</recordid><startdate>20140728</startdate><enddate>20140728</enddate><creator>Lo, Fang-Yuh</creator><creator>Huang, Cheng-De</creator><creator>Chou, Kai-Chieh</creator><creator>Guo, Jhong-Yu</creator><creator>Liu, Hsiang-Lin</creator><creator>Ney, Verena</creator><creator>Ney, Andreas</creator><creator>Shvarkov, Stepan</creator><creator>Pezzagna, Sébastien</creator><creator>Reuter, Dirk</creator><creator>Chia, Chi-Ta</creator><creator>Chern, Ming-Yau</creator><creator>Wieck, Andreas D.</creator><creator>Massies, Jean</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140728</creationdate><title>Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films</title><author>Lo, Fang-Yuh ; Huang, Cheng-De ; Chou, Kai-Chieh ; Guo, Jhong-Yu ; Liu, Hsiang-Lin ; Ney, Verena ; Ney, Andreas ; Shvarkov, Stepan ; Pezzagna, Sébastien ; Reuter, Dirk ; Chia, Chi-Ta ; Chern, Ming-Yau ; Wieck, Andreas D. ; Massies, Jean</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-7c508cf6984a81e8ee35d658c4173a158f7ad1804ade9a80a9a2a79b5f67b00e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ANNEALING</topic><topic>Applied physics</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTAL STRUCTURE</topic><topic>Emission analysis</topic><topic>EMISSION SPECTRA</topic><topic>Epitaxial growth</topic><topic>FERROMAGNETISM</topic><topic>GALLIUM NITRIDES</topic><topic>ION BEAMS</topic><topic>ION IMPLANTATION</topic><topic>KEV RANGE 100-1000</topic><topic>MAGNETIC PROPERTIES</topic><topic>Magnetism</topic><topic>MAGNETIZATION</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>Optical measurement</topic><topic>OPTICAL PROPERTIES</topic><topic>PHOTOLUMINESCENCE</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>RAMAN EFFECT</topic><topic>Samarium</topic><topic>SAMARIUM IONS</topic><topic>SPECTROSCOPY</topic><topic>Spectrum analysis</topic><topic>SQUID DEVICES</topic><topic>Superconducting quantum interference devices</topic><topic>THIN FILMS</topic><topic>X ray spectra</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lo, Fang-Yuh</creatorcontrib><creatorcontrib>Huang, Cheng-De</creatorcontrib><creatorcontrib>Chou, Kai-Chieh</creatorcontrib><creatorcontrib>Guo, Jhong-Yu</creatorcontrib><creatorcontrib>Liu, Hsiang-Lin</creatorcontrib><creatorcontrib>Ney, Verena</creatorcontrib><creatorcontrib>Ney, Andreas</creatorcontrib><creatorcontrib>Shvarkov, Stepan</creatorcontrib><creatorcontrib>Pezzagna, Sébastien</creatorcontrib><creatorcontrib>Reuter, Dirk</creatorcontrib><creatorcontrib>Chia, Chi-Ta</creatorcontrib><creatorcontrib>Chern, Ming-Yau</creatorcontrib><creatorcontrib>Wieck, Andreas D.</creatorcontrib><creatorcontrib>Massies, Jean</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lo, Fang-Yuh</au><au>Huang, Cheng-De</au><au>Chou, Kai-Chieh</au><au>Guo, Jhong-Yu</au><au>Liu, Hsiang-Lin</au><au>Ney, Verena</au><au>Ney, Andreas</au><au>Shvarkov, Stepan</au><au>Pezzagna, Sébastien</au><au>Reuter, Dirk</au><au>Chia, Chi-Ta</au><au>Chern, Ming-Yau</au><au>Wieck, Andreas D.</au><au>Massies, Jean</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films</atitle><jtitle>Journal of applied physics</jtitle><date>2014-07-28</date><risdate>2014</risdate><volume>116</volume><issue>4</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 1014 to 1 × 1016 cm−2. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 1015 cm−2 before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4891226</doi></addata></record>
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subjects	ANNEALING Applied physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL STRUCTURE Emission analysis EMISSION SPECTRA Epitaxial growth FERROMAGNETISM GALLIUM NITRIDES ION BEAMS ION IMPLANTATION KEV RANGE 100-1000 MAGNETIC PROPERTIES Magnetism MAGNETIZATION MOLECULAR BEAM EPITAXY Optical measurement OPTICAL PROPERTIES PHOTOLUMINESCENCE PHYSICAL RADIATION EFFECTS RAMAN EFFECT Samarium SAMARIUM IONS SPECTROSCOPY Spectrum analysis SQUID DEVICES Superconducting quantum interference devices THIN FILMS X ray spectra X-RAY DIFFRACTION
title	Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films
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