Near surface inversion layer recombination in Al{sub 2}O{sub 3} passivated n-type silicon

On n-type silicon, negatively charged surface passivation layers create a near surface recombination channel, which could significantly reduce the effective carrier lifetime at low injection levels (Δn 

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Bibliographic Details
Published in:Journal of applied physics 2014-07, Vol.116 (4)
Main Authors: Dirnstorfer, Ingo, Simon, Daniel K., Jordan, Paul M., Mikolajick, Thomas, TU Dresden, Institut für Halbleiter-und Mikrosystemtechnik
Format: Article
Language:English
Subjects:
ALUMINIUM OXIDES
CAPTURE
CARRIER LIFETIME
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CORRELATIONS
CROSS SECTIONS
CRYSTAL DEFECTS
DIELECTRIC MATERIALS
INJECTION
LAYERS
N-TYPE CONDUCTORS
PASSIVATION
PHOTOCONDUCTIVITY
RECOMBINATION
REDUCTION
SILICON
SIMULATION
STEADY-STATE CONDITIONS
SURFACES
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Description
Summary:On n-type silicon, negatively charged surface passivation layers create a near surface recombination channel, which could significantly reduce the effective carrier lifetime at low injection levels (Δn 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4891021