Optical density of states in ultradilute GaAsN alloy: Coexistence of free excitons and impurity band of localized and delocalized states

Optically active states in liquid phase epitaxy-grown ultra-dilute GaAsN are studied. The feature-rich low temperature photoluminescence spectrum has contributions from excitonic band states of the GaAsN alloy, and two types of defect states—localized and extended. The degree of delocalization for e...

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Bibliographic Details
Published in:Journal of applied physics 2014-07, Vol.116 (2)
Main Authors: Bhuyan, Sumi, Das, Sanat K., Dhar, Sunanda, Pal, Bipul, Bansal, Bhavtosh
Format: Article
Language:English
Subjects:
Applied physics
ARSENIC COMPOUNDS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
Defects
Electron energy
ELECTRON TEMPERATURE
ELECTRONIC STRUCTURE
Emission analysis
Epitaxial growth
EXCITONS
GALLIUM COMPOUNDS
IMPURITIES
LIQUID PHASE EPITAXY
Liquid phases
NITROGEN COMPOUNDS
OPACITY
Optical activity
Optical density
OSCILLATOR STRENGTHS
PHONONS
PHOTOLUMINESCENCE
SPECTRA
TERNARY ALLOY SYSTEMS
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Summary:Optically active states in liquid phase epitaxy-grown ultra-dilute GaAsN are studied. The feature-rich low temperature photoluminescence spectrum has contributions from excitonic band states of the GaAsN alloy, and two types of defect states—localized and extended. The degree of delocalization for extended states both within the conduction and defect bands, characterized by the electron temperature, is found to be similar. The degree of localization in the defect band is analyzed by the strength of the phonon replicas. Stronger emission from these localized states is attributed to their giant oscillator strength.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4886178