The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

The electron mobility scattering mechanisms in AlN/GaN heterostuctures with 3 nm and 6 nm AlN barrier thicknesses were investigated by temperature-dependent Hall measurements. The effect of interface roughness (IFR) scattering on the electron mobility was found to be enhanced by increasing AlN barri...

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Bibliographic Details
Published in:Journal of applied physics 2014-07, Vol.116 (2)
Main Authors: Lv, Yuanjie, Feng, Zhihong, Lin, Zhaojun, Ji, Ziwu, Zhao, Jingtao, Gu, Guodong, Han, Tingting, Yin, Jiayun, Liu, Bo, Cai, Shujun
Format: Article
Language:English
Subjects:
ALUMINIUM NITRIDES
Aluminum nitride
Applied physics
Barrier layers
CAPACITANCE
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
COULOMB FIELD
Current voltage characteristics
CURRENTS
DEPLETION LAYER
ELECTRIC POTENTIAL
ELECTRON MOBILITY
Electrons
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
Heterostructures
Interface roughness
INTERFACES
POLARIZATION
ROUGHNESS
SCATTERING
Semiconductor devices
TEMPERATURE DEPENDENCE
THICKNESS
Transistors
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Summary:The electron mobility scattering mechanisms in AlN/GaN heterostuctures with 3 nm and 6 nm AlN barrier thicknesses were investigated by temperature-dependent Hall measurements. The effect of interface roughness (IFR) scattering on the electron mobility was found to be enhanced by increasing AlN barrier thickness. Moreover, using the measured capacitance-voltage and current-voltage characteristics of the fabricated heterostructure field-effect transistors (HFETs) with different Schottky areas on the two heterostuctures, the variations of electron mobility with different gate biases were investigated. Due to enhanced IFR scattering, the influence of polarization Coulomb field (PCF) scattering on electron mobility was found to decrease with increasing AlN barrier layer thickness. However, the PCF scattering remained an important scattering mechanism in the AlN/GaN HFETs.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4889925