Critical boron-doping levels for generation of dislocations in synthetic diamond

Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4/H2 molar ratios and on growth directions. The critical boro...

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Bibliographic Details
Published in:Applied physics letters 2014-10, Vol.105 (17)
Main Authors: Alegre, M. P., Araújo, D., Fiori, A., Pinero, J. C., Lloret, F., Villar, M. P., Achatz, P., Chicot, G., Bustarret, E., Jomard, F.
Format: Article
Language:English
Subjects:
Applied physics
Boron
BORON ADDITIONS
BURGERS VECTOR
CONCENTRATION RATIO
Condensed Matter
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
Defects
DIAMONDS
DISLOCATIONS
Doping
LAYERS
Materials Science
Physics
STRAINS
TRANSMISSION ELECTRON MICROSCOPY
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Summary:Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4/H2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 1020at/cm3 range in the ⟨111⟩ direction and at 3.2 × 1021 at/cm3 for the ⟨001⟩ one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4900741