Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming...

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Bibliographic Details
Published in:Applied physics letters 2014-08, Vol.105 (7)
Main Authors: Sharath, S. U., Kurian, J., Komissinskiy, P., Hildebrandt, E., Alff, L., Bertaud, T., Walczyk, C., Calka, P., Schroeder, T., Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC POTENTIAL
FILAMENTS
HAFNIUM OXIDES
LAYERS
MEMORY DEVICES
POLYCRYSTALS
SILICON
STOICHIOMETRY
SUBSTRATES
SURFACES
SWITCHES
THICKNESS
THIN FILMS
TITANIUM NITRIDES
VACANCIES
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Summary:The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4893605