Evaluation of thickness and strain of thin planar layers of InAs on GaAs(001) using spectroscopic ellipsometry

We develop a technique for accurately measuring thickness of planar InAs films grown on (001) GaAs by spectroscopic ellipsometry, using bulk optical constants. We observe that the critical point structure for the E1 and E1 + Δ1 transitions extracted from the measured dielectric properties varies wit...

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Bibliographic Details
Published in:Applied physics letters 2014-07, Vol.105 (3)
Main Authors: Eyink, K. G., Szmulowicz, F., Esposito, D., Grazulis, L., Hill, M., Mahalingam, K., Aronow, A. J.
Format: Article
Language:English
Subjects:
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Critical point
DEFORMATION
Dependence
DIELECTRIC PROPERTIES
DISLOCATIONS
ELLIPSOMETRY
EVALUATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
Potential theory
Quantum confinement
Spectroellipsometry
STRAINS
THICKNESS
Thickness measurement
Thin films
TRANSMISSION ELECTRON MICROSCOPY
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Summary:We develop a technique for accurately measuring thickness of planar InAs films grown on (001) GaAs by spectroscopic ellipsometry, using bulk optical constants. We observe that the critical point structure for the E1 and E1 + Δ1 transitions extracted from the measured dielectric properties varies with strain in the layer. Transmission electron microscopy confirms the extracted thickness and measures the residual strain based on the dislocation spacing in the film. At small thickness, the E1 critical point is seen to markedly deviate from the dependence predicted by deformation potential theory and appears to be consistent with additional quantum confinement effects.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4890236