Modification of the crystal structure of gadolinium gallium garnet by helium ion irradiation

The structure of gadolinium gallium garnet (GGG) single crystals before and after implantation by He + ions has been investigated using high-resolution X-ray diffraction methods and the generalized dynamic theory of X-ray scattering. The main types of growth defects in GGG single crystals and radiat...

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Bibliographic Details
Published in:Crystallography reports 2013-12, Vol.58 (7), p.1017-1022
Main Authors: Ostafiychuk, B. K., Yaremiy, I. P., Yaremiy, S. I., Fedoriv, V. D., Tomyn, U. O., Umantsiv, M. M., Fodchuk, I. M., Kladko, V. P.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
CRYSTAL GROWTH
Crystallography and Scattering Methods
GADOLINIUM
GADOLINIUM COMPOUNDS
GALLIUM
HELIUM IONS
LAYERS
MONOCRYSTALS
Physics
Physics and Astronomy
Real Structure of Crystals
X-RAY DIFFRACTION
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Summary:The structure of gadolinium gallium garnet (GGG) single crystals before and after implantation by He + ions has been investigated using high-resolution X-ray diffraction methods and the generalized dynamic theory of X-ray scattering. The main types of growth defects in GGG single crystals and radiation-induced defects in the ion-implanted layer have been determined. It is established that the concentration of dislocation loops in the GGG surface layer modified by ion implantation increases and their radius decreases with an increase in the implantation dose.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774513070122