Nano-fabricated perpendicular magnetic anisotropy electrodes for lateral spin valves and observation of Nernst-Ettingshausen related signals

Lateral spin valves (LSVs) are efficient structures for characterizing spin currents in spintronics devices. Most LSVs are based on ferromagnetic (FM) electrodes for spin-injection and detection. While there are advantages for using perpendicular magnetic anisotropy (PMA) FM, e.g., stability to nano...

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Bibliographic Details
Published in:Journal of applied physics 2014-08, Vol.116 (7)
Main Authors: Chejanovsky, N., Sharoni, A.
Format: Article
Language:English
Subjects:
ALUMINIUM NITRIDES
ANISOTROPY
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Cobalt
CURRENTS
DETECTION
ELECTRIC POTENTIAL
ELECTRODES
ETTINGSHAUSEN EFFECT
FABRICATION
Ferromagnetism
Ferrous alloys
JOULE HEATING
LAYERS
Magnetic alloys
Magnetic anisotropy
MILLING
Multilayers
Nernst-Ettingshausen effect
Ohmic dissipation
PERMALLOY
Resistance heating
SIGNALS
SPIN
Spin valves
Spintronics
Thermomagnetic effects
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Summary:Lateral spin valves (LSVs) are efficient structures for characterizing spin currents in spintronics devices. Most LSVs are based on ferromagnetic (FM) electrodes for spin-injection and detection. While there are advantages for using perpendicular magnetic anisotropy (PMA) FM, e.g., stability to nano-scaling, these have almost not been studied. This is mainly due to difficulties in fabricating PMA FMs in a lateral geometry. We present here an efficient method, based on ion-milling through an AlN mask, for fabrication of LSVs with multi-layered PMA FMs such as Co/Pd and Co/Ni. We demonstrate, using standard permalloy FMs, that the method enables efficient spin injection. We show the multi-layer electrodes retain their PMA properties as well as spin injection and detection in PMA LSVs. In addition, we find a large asymmetric voltage signal which increases with current. We attribute this to a Nernst-Ettingshausen effect caused by local Joule heating and the perpendicular magnetic easy axis.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4893302