Modeling direct interband tunneling. II. Lower-dimensional structures

We investigate the applicability of the two-band Hamiltonian and the widely used Kane analytical formula to interband tunneling along unconfined directions in nanostructures. Through comparisons with k·p and tight-binding calculations and quantum transport simulations, we find that the primary corre...

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Bibliographic Details
Published in:Journal of applied physics 2014-08, Vol.116 (5)
Main Authors: Pan, Andrew, Chui, Chi On
Format: Article
Language:English
Subjects:
Applied physics
CALIBRATION
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COMPARATIVE EVALUATIONS
Computer simulation
CORRECTIONS
CURRENTS
Energy gap
FIELD EFFECT TRANSISTORS
Green's functions
HAMILTONIANS
NANOSTRUCTURES
Nanotechnology devices
Quantum transport
SEMICLASSICAL APPROXIMATION
Semiconductor devices
SIMULATION
TUNNEL EFFECT
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Summary:We investigate the applicability of the two-band Hamiltonian and the widely used Kane analytical formula to interband tunneling along unconfined directions in nanostructures. Through comparisons with k·p and tight-binding calculations and quantum transport simulations, we find that the primary correction is the change in effective band gap. For both constant fields and realistic tunnel field-effect transistors, dimensionally consistent band gap scaling of the Kane formula allows analytical and numerical device simulations to approximate non-equilibrium Green's function current characteristics without arbitrary fitting. This allows efficient first-order calibration of semiclassical models for interband tunneling in nanodevices.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4891528