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Silicon fiber with p-n junction
In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–80...
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Published in: | Applied physics letters 2014-09, Vol.105 (12) |
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container_title | Applied physics letters |
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creator | Homa, D. Cito, A. Pickrell, G. Hill, C. Scott, B. |
description | In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers. |
doi_str_mv | 10.1063/1.4895661 |
format | article |
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The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4895661</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; BORON ADDITIONS ; Boron fibers ; Cladding ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Current voltage characteristics ; DOPED MATERIALS ; ELECTRIC CONDUCTIVITY ; ELECTRIC POTENTIAL ; Electronic devices ; ELECTRONIC EQUIPMENT ; FIBERS ; Fused silica ; Microprocessors ; Optical fibers ; P-N JUNCTIONS ; SILICA ; SILICON ; Silicon dioxide ; Suction</subject><ispartof>Applied physics letters, 2014-09, Vol.105 (12)</ispartof><rights>2014 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-66690df4a54817cf525962852958b6c6a24dfb860a1555c7c348b389de73492a3</citedby><cites>FETCH-LOGICAL-c285t-66690df4a54817cf525962852958b6c6a24dfb860a1555c7c348b389de73492a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,782,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22350749$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Homa, D.</creatorcontrib><creatorcontrib>Cito, A.</creatorcontrib><creatorcontrib>Pickrell, G.</creatorcontrib><creatorcontrib>Hill, C.</creatorcontrib><creatorcontrib>Scott, B.</creatorcontrib><title>Silicon fiber with p-n junction</title><title>Applied physics letters</title><description>In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.</description><subject>Applied physics</subject><subject>BORON ADDITIONS</subject><subject>Boron fibers</subject><subject>Cladding</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Current voltage characteristics</subject><subject>DOPED MATERIALS</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRIC POTENTIAL</subject><subject>Electronic devices</subject><subject>ELECTRONIC EQUIPMENT</subject><subject>FIBERS</subject><subject>Fused silica</subject><subject>Microprocessors</subject><subject>Optical fibers</subject><subject>P-N JUNCTIONS</subject><subject>SILICA</subject><subject>SILICON</subject><subject>Silicon dioxide</subject><subject>Suction</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkEFLxDAUhIMoWFcP_gILnjxkzUvy0uQoi6vCggf1HNo0ZVPWtiZZxH9vZRc8DcN8DMMQcg1sCUyJe1hKbVApOCEFsKqiAkCfkoIxJqgyCOfkIqV-tsiFKMjNW9gFNw5lFxofy--Qt-VEh7LfDy6HcbgkZ129S_7qqAvysX58Xz3TzevTy-phQx3XmKlSyrC2kzVKDZXrkKNRc8IN6kY5VXPZdo1WrAZEdJUTUjdCm9ZXQhpeiwW5PfSOKQebXMjebeddg3fZci6QVdL8U1Mcv_Y-ZduP-zjMwywHrlAaKcVM3R0oF8eUou_sFMNnHX8sMPv3kgV7fEn8AqfEVOM</recordid><startdate>20140922</startdate><enddate>20140922</enddate><creator>Homa, D.</creator><creator>Cito, A.</creator><creator>Pickrell, G.</creator><creator>Hill, C.</creator><creator>Scott, B.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140922</creationdate><title>Silicon fiber with p-n junction</title><author>Homa, D. ; Cito, A. ; Pickrell, G. ; Hill, C. ; Scott, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-66690df4a54817cf525962852958b6c6a24dfb860a1555c7c348b389de73492a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied physics</topic><topic>BORON ADDITIONS</topic><topic>Boron fibers</topic><topic>Cladding</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Current voltage characteristics</topic><topic>DOPED MATERIALS</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRIC POTENTIAL</topic><topic>Electronic devices</topic><topic>ELECTRONIC EQUIPMENT</topic><topic>FIBERS</topic><topic>Fused silica</topic><topic>Microprocessors</topic><topic>Optical fibers</topic><topic>P-N JUNCTIONS</topic><topic>SILICA</topic><topic>SILICON</topic><topic>Silicon dioxide</topic><topic>Suction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Homa, D.</creatorcontrib><creatorcontrib>Cito, A.</creatorcontrib><creatorcontrib>Pickrell, G.</creatorcontrib><creatorcontrib>Hill, C.</creatorcontrib><creatorcontrib>Scott, B.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Homa, D.</au><au>Cito, A.</au><au>Pickrell, G.</au><au>Hill, C.</au><au>Scott, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Silicon fiber with p-n junction</atitle><jtitle>Applied physics letters</jtitle><date>2014-09-22</date><risdate>2014</risdate><volume>105</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4895661</doi></addata></record> |
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source | American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
subjects | Applied physics BORON ADDITIONS Boron fibers Cladding CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Current voltage characteristics DOPED MATERIALS ELECTRIC CONDUCTIVITY ELECTRIC POTENTIAL Electronic devices ELECTRONIC EQUIPMENT FIBERS Fused silica Microprocessors Optical fibers P-N JUNCTIONS SILICA SILICON Silicon dioxide Suction |
title | Silicon fiber with p-n junction |
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